Reduced 980 nm laser facet absorption by band gap shifted extended cavities

被引：10

作者：

Piva, PG ^{[1
]}

Goldberg, RD

Mitchell, IV

Fafard, S

Dion, M

Buchanan, M

Charbonneau, S

Hillier, G

Miner, C

机构：

[1] Univ Western Ontario, Dept Phys, London, ON N6A 3K7, Canada

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[3] Nortel Technol, Ottawa, ON K1Y 4H7, Canada

[4] Univ Western Ontario, Dept Phys & Astrophys, London, ON N6A 3K7, Canada

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 04期

关键词：

D O I：

10.1116/1.590230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reflectance modulation thermography has been used to determine facet temperatures of InGaAs/ GaAs double quantum well (QW) GRINSCH ridge-waveguide lasers possessing band gap shifted extended cavities (BSECs). The incorporation of BSECs produced by mega-electron-volt ion-implantation enhanced QW intermixing, significantly decreased the laser facet temperatures and should result in increased device longevity prior to the onset of catastrophic mirror failure. Low energy implants in Al-free InGaAs/InGaASP/InGaP laser structures exhibited large effective diffusivities of intermixing enhancing defects from the implant damage regions. This latter material system is particularly well suited for the implementation of BSECs as end of range damage from the implant can be kept spatially isolated from the optical mode regions. (C) 1998 American Vacuum Society.

引用

页码：1790 / 1793

页数：4

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