Development of Sn-Bi systems lead-free solder paste

被引:0
作者
Li, Kangning [1 ]
Lei, Yongping
Lin, Jian [1 ]
Liu, Baoquan [2 ]
Bai, Hailong [2 ]
Qin, Junhu [2 ]
机构
[1] Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China
[2] Yunnan Tin Mat Co Ltd, Yunnan 650217, Peoples R China
来源
2013 14TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2013年
基金
北京市自然科学基金; 中国国家自然科学基金;
关键词
lead-free solder paste; flux; low temperature; wettability;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The contents of solvent, rosin and activator were adjusted to obtain the most appropriate proportion of the flux for Sn-Bi based lead free solder material by a series of orthogonal experiments. Compared with some commercial Sn-Bi based solder pastes, some tests about the solder paste, such as solder ball test, wettability test and slump test had been carried on. It was found that the self-made Sn-Bi based solder paste had an excellent performance. The welding spots had good appearance; the residues solidified well. The effect of the solder powder ratio on rheological and printing behavior had been studied. When the mass ratio was 12:88wt%, the best rheological and printing properties of solder paste could be obtained.
引用
收藏
页码:160 / +
页数:2
相关论文
共 7 条
  • [1] Chen Haiyan, 2009, Electronic Components & Materials, V28, P33, DOI 10.3969/j.issn.1001-2028.2009.05.011
  • [2] The effect of solder paste composition on the reliability of SnAgCu joints
    Nurmi, S
    Sundelin, J
    Ristolainen, E
    Lepistö, T
    [J]. MICROELECTRONICS RELIABILITY, 2004, 44 (03) : 485 - 494
  • [3] Richard R., 1997, SURFACE MOUNT TECHNO, V11, P52
  • [4] Xia Z.D., 2002, ELECT PROCESS TECHNO, V23, P185
  • [5] Xia ZD., 2002, ELECT PROCESS TECHNO, V05, P185
  • [6] [杨剑 YANG Jian], 2006, [化学研究与应用, Chemical Research and Application], V18, P472
  • [7] Template synthesis of high-density carbon nanotube arrays
    Zhang, XY
    Zhang, LD
    Zheng, MJ
    Li, GH
    Zhao, LX
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 223 (1-2) : 306 - 310