Anomalous Hall effect in ion-beam sputtered Co2FeAl full Heusler alloy thin films

被引：21

作者：

Husain, Sajid ^{[1
]}

Kumar, Ankit ^{[2
]}

Akansel, Serkan ^{[2
]}

Svedlindh, Peter ^{[2
]}

Chaudhary, Sujeet ^{[1
]}

机构：

[1] Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India

[2] Dept Engn Sci, Angstrom Lab, Box 534, SE-75121 Uppsala, Sweden

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2017年 / 442卷

关键词：

Heusler alloy; Ion-beam sputtering; Atomic ordering; Anomalous Hall effects; Berry curvature; FERROMAGNETS; TRANSPORT;

D O I：

10.1016/j.jmmm.2017.06.127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Investigations of temperature dependent anomalous Hall effect and longitudinal resistivity in Co2FeAl (CFA) thin films grown on Si(100) at different substrate temperature Ts are reported. The scaling of the anomalous Hall conductivity (AHC) and the associated phenomenological mechanisms (intrinsic and extrinsic) are analyzed vis-a-vis influence of Ts. The intrinsic contribution to AHC is found to be dominating over the extrinsic one. The appearance of a resistivity minimum at low temperature necessitates the inclusion of quantum corrections on account of weak localization and electron-electron scattering effects whose strength reduces with increase in Ts. The study establishes that the optimization of Ts plays an important role in the improvement of atomic ordering which indicates the higher strength of spinorbit coupling and leads to the dominant intrinsic contribution to AHC in these CFA full Heusler alloy thin films. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：288 / 294

页数：7

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