New method of dispersion minimization of Si p-n junction temperature sensors

被引：0
|
作者：
Yatsuk, V. O. [1 ]
Basalkevych, O. Ye. [1 ]
Yatsuk, Yu. V. [1 ]
Sachenko, A. O. [2 ]
机构：
[1] Lviv Polytechn Natl Univ, 12 S Bandery, UA-79013 Lvov, Ukraine
[2] Natl Econ Univ, UA-46004 Ternopol, Ukraine
来源：
2007 IEEE SENSORS APPLICATIONS SYMPOSIUM | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The mathematical model of a Si p-n junction temperature sensor, in which all physical processes are under consideration, is developed. The method of conversion characteristic dispersion minimization is proposed. It implies the modulation of measuring current with the further estimation of voltage drops on a p-n junction. Conducted mathematical modeling and a digital thermometer experimental device have testified main theoretical assumptions.
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页码：41 / +
页数：2
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