New method of dispersion minimization of Si p-n junction temperature sensors

被引：0

作者：

Yatsuk, V. O. ^{[1
]}

Basalkevych, O. Ye. ^{[1
]}

Yatsuk, Yu. V. ^{[1
]}

Sachenko, A. O. ^{[2
]}

机构：

[1] Lviv Polytechn Natl Univ, 12 S Bandery, UA-79013 Lvov, Ukraine

[2] Natl Econ Univ, UA-46004 Ternopol, Ukraine

来源：

2007 IEEE SENSORS APPLICATIONS SYMPOSIUM | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mathematical model of a Si p-n junction temperature sensor, in which all physical processes are under consideration, is developed. The method of conversion characteristic dispersion minimization is proposed. It implies the modulation of measuring current with the further estimation of voltage drops on a p-n junction. Conducted mathematical modeling and a digital thermometer experimental device have testified main theoretical assumptions.

引用

页码：41 / +

页数：2

共 29 条

[1]

*CAT AN DEV CORP, 2006, AN DEV WEBS

[2]

*CAT ELFA, 2006, ELFA WEBS

[3]

FOGELSON IB, 1988, METROLOGY

[4]

GARDNER JW, 1994, MICROSENSORS PRINCIP

[5]

GOLOUB B, 1997, P SENS 97 NURNB, V3, P183

[6]

IVANCHENKO OV, 1999, P TECHN DES UK NAT A

[7] Model performance improvement for a calibration-free temperature measurement based on p-n junctions [J].

Kanoun, O ;

Tränkler, HR .

SENSORS AND ACTUATORS A-PHYSICAL, 2002, 101 (03) :275-282

[8]

KANOUN O, 2003, CALIBRATION FREE TEM, V68, P171

[9]

KOROVIN NI, 1994, DEVICE CONTROL SYSTE

[10] SEMICONDUCTOR DIODES AND TRANSISTORS AS ELECTRICAL THERMOMETERS [J].

MCNAMARA, AG .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1962, 33 (03) :330-&

← 1 2 3 →