Study on the phase diagram of the Ti-B-N system and the interfacial reaction of the Ti/BN joints

被引:28
作者
Ma, XY [1 ]
Li, CR [1 ]
Zhang, WJ [1 ]
机构
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2005年 / 392卷 / 1-2期
基金
中国国家自然科学基金;
关键词
Ti-B-N ternary; phase diagram; phase sequence;
D O I
10.1016/j.msea.2004.10.018
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The isothermal sections of the Ti-B-N system at different temperatures 1273 K, 1673 K and 1893 K were constructed by extending the related binaries, Ti-B, B-N and Ti-N. The calculated phase diagrams reproduce the latest experimental results well. On the basis of the phase equilibrium calculation, the interfacial reactions and the phase sequences between the two pairs of the diffusion couples, Ti/BN, were analyzed theoretically under the reported experimental conditions of two different couples, the BN plates immersed into a loose Ti powder and the BN particles embedded into a dense Ti matrix at 1273 K. Different phase formation sequences and apparent spatial phase sequences for those two kinds of Ti/BN joints were obtained. It was proved that the different phase sequences of both the phase formation sequences and the apparent spatial phase sequences were dominated by the relative amounts and distribution of the two pairs in the diffusion couples. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:394 / 402
页数:9
相关论文
共 32 条
[1]  
BATZNER C, 1998, THERMOCHEMICAL DATAB
[2]   THE THERMODYNAMIC STABILITY OF REFRACTORY BORIDES [J].
BREWER, L ;
HARALDSEN, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (07) :399-406
[3]   Synthesis of mixed hexagonal-cubic BN thin films at low temperature [J].
Capelletti, R ;
Elena, M ;
Miotello, A ;
Ossi, PM .
APPLIED SURFACE SCIENCE, 1997, 108 (01) :33-38
[4]  
Chase M.W., 1998, NIST JANAF THEMOCHEM, V4th, P1
[5]   SGTE DATA FOR PURE ELEMENTS [J].
DINSDALE, AT .
CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1991, 15 (04) :317-425
[6]   PROSPECTS FOR DEVICE IMPLEMENTATION OF WIDE BAND-GAP SEMICONDUCTORS [J].
EDGAR, JH .
JOURNAL OF MATERIALS RESEARCH, 1992, 7 (01) :235-252
[7]   Interfacial structure and reaction mechanism of AlN/Ti joints [J].
ElSayed, MH ;
Naka, M ;
Schuster, JC .
JOURNAL OF MATERIALS SCIENCE, 1997, 32 (10) :2715-2721
[8]   Coating of BN via solid state reaction with Ti powder [J].
Faran, E ;
Gotman, I ;
Gutmanas, EY .
MATERIALS LETTERS, 2000, 43 (04) :192-196
[9]   Experimental study of the reaction zone at boron nitride ceramic-Ti metal interface [J].
Faran, E ;
Gotman, I ;
Gutmanas, EY .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2000, 288 (01) :66-74
[10]  
FENISH RG, 1966, T METALL SOC AIME, V236, P804