Co-adsorption of Cu and Pb on the Si(111)-(7x7) surface:: interface formation

被引:2
作者
Shukrinov, P
Mutombo, P
Cháb, V
Prince, KC
机构
[1] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic
[2] Sincrotrone Trieste, I-34012 Trieste, Italy
关键词
silicon; scanning tunneling microscopy; lead; surface structure; morphology; roughness; and topography; copper;
D O I
10.1016/S0039-6028(03)00182-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The adsorption of Cu and Pb atoms on a Si(I 1 l)-7 x 7 surface was studied by means of scanning tunnelling microscopy (STM). After deposition of less than or equal to, 0.1 monolayer (ML) of copper on the Pb root3 x root3 mosaic phase. and a subsequent annealing up to similar to373 K, new objects of a hexagonal shape appear on a surface. They,are scattered over the surface and localised next to the mosaic phase islands. The difference between atomically resolved images of filled and empty states suggests strong covalent bonding within a hexagon. Increasing the concentration of Cu atoms leads to an in, creasing number of hexagons and their agglomeration. Annealing of this surface, at a higher temperature. (>470 K) leads to the transformation of these hexagonal-like objects and their agglomeration into the pseudo-"5 x 5" structure, commonly observed for the Cu/Si(l 1 I)system. The absence of hexagons at very low Cu concentration demonstrates the presence of a long-range, attractive interaction among Cu atoms and their strong diffusion just above room temperature (RT). (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:650 / 654
页数:5
相关论文
共 11 条
[1]   PHASE-SEPARATION ON AN ATOMIC SCALE - THE FORMATION OF A NOVEL QUASIPERIODIC 2D-STRUCTURE [J].
DEMUTH, JE ;
KOEHLER, UK ;
HAMERS, RJ ;
KAPLAN, P .
PHYSICAL REVIEW LETTERS, 1989, 62 (06) :641-644
[2]   GROWTH AND MORPHOLOGY OF PB ON SI(111) [J].
GANZ, E ;
HWANG, IS ;
XIONG, FL ;
THEISS, SK ;
GOLOVCHENKO, J .
SURFACE SCIENCE, 1991, 257 (1-3) :259-273
[3]   Atomic structure and growth of the Cu/Si(111)-"5x5" phase [J].
Kawasaki, T ;
An, T ;
Ito, H ;
Ichinokawa, T .
SURFACE SCIENCE, 2001, 487 (1-3) :39-48
[4]  
LIFSHITS VG, 1994, SURFACE PHASES SILIC, P339
[5]   Quantized valence states of the Pb/Si(111) mosaic phase -: art. no. 035325 [J].
Ressel, B ;
Slezák, J ;
Prince, KC ;
Cháb, V .
PHYSICAL REVIEW B, 2002, 66 (03) :353251-353255
[6]   Initial stages of adsorption in the Cu/Si(111) system [J].
Shukrinov, P ;
Savchenkov, A ;
Mutombo, P ;
Cháb, V ;
Slezák, J .
SURFACE SCIENCE, 2002, 506 (03) :223-227
[7]  
SIMAO RA, 1997, J VAC SCI TECHNOL A, V15
[8]   STM study of a Pb/Si(111) interface at room and low temperatures [J].
Slezák, J ;
Mutombo, P ;
Cháb, V .
PHYSICAL REVIEW B, 1999, 60 (19) :13328-13330
[9]   NUCLEATION OF CU ON SI(111)7X7 AND ATOMIC-STRUCTURE OF THE CU/SI(111) INTERFACE [J].
TOSCH, S ;
NEDDERMEYER, H .
SURFACE SCIENCE, 1989, 211 (1-3) :133-142
[10]   EXAMINATION OF THE CU/SI(111) 5X5 STRUCTURE BY SCANNING TUNNELING MICROSCOPY [J].
WILSON, RJ ;
CHIANG, S ;
SALVAN, F .
PHYSICAL REVIEW B, 1988, 38 (17) :12696-12699