RF Linearity of SiGe HBT: Physics, Compact Modeling Using Mextram 505 and X-Parameter Based Measurements

被引：0

作者：

Niu, Guofu ^{[1
]}

Li, Yiao ^{[1
]}

Ding, Xuewei ^{[1
]}

Zhang, Anni ^{[1
]}

Zhang, Huaiyuan ^{[1
]}

Scholten, Andries ^{[2
]}

Willemsen, Marnix ^{[2
]}

Pijper, Ralf ^{[2
]}

Tiemeijer, Luuk F. ^{[2
]}

机构：

[1] Auburn Univ, Alabama Micro & Nanoelect Sci & Technol Ctr, Elect & Comp Engn Dept, Auburn, AL 36849 USA

[2] NXP Semicond, High Tech Campus 37, NL-5656 AE Eindhoven, Netherlands

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

关键词：

SiGe HBT; Linearity; IP3; Compact Modeling; X-parameters; Distortion;

D O I：

10.1109/EDTM50988.2021.9420873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review linearity of SiGe HBTs, from physics to RF measurements using X-parameter capable NVNA, to compact modeling using Mextram 505, an industry standard model. New models of high injection depletion capacitance and avalanche enable accurate linearity sweet spot modeling. Source distortion and port mismatches can be accounted for using X-parameters to significantly improve measurement accuracy, which also greatly simplifies circuit setup in modeling.

引用

页数：3