Lateral field emitters fabricated using carbon nanotubes

被引：9
|
作者：
Teh, AS
Lee, SB
Teo, KBK
Chhowalla, M
Milne, WI
Hasko, DG
Ahmed, H
Amaratunga, GAJ
机构：
[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England
[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[3] Hanyang Univ, Dept Nanotechnol, Seoul 133791, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2003年 / 67-8卷
关键词：
carbon nanotube; field emission; lateral;
D O I：
10.1016/S0167-9317(03)00140-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the fabrication of lateral emitters using carbon nanotubes (CNTs) grown via plasma enhanced chemical vapour deposition (PECVD). Carbon nanotubes are dispersed randomly onto a substrate, mapped, contacted with metal, and by etching the substrate, a suspended lateral emitter structure is formed. Field emission measurements from the lateral emitters show a turn-on voltage as low as 12 V The emission characteristics showed good fits to the Fowler-Nordheim (FN) theory indicating that conventional field emission was indeed observed from these devices. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：789 / 796
页数：8
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