The selective growth in hydride vapor phase epitaxy of GaN

被引：0

作者：

Detchprohm, T ^{[1
]}

Kuroda, T ^{[1
]}

Hiramatsu, K ^{[1
]}

Sawaki, N ^{[1
]}

Goto, H ^{[1
]}

机构：

[1] CHUBU UNIV,DEPT ELECT ENGN,KASUGAI,AICHI 487,JAPAN

来源：

SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The sputtering films of SiO2 were employed as the mask for the selective growth of h-GaN via hydride vapor phase epitaxy. Two different types of substrates were used: (1) alpha-Al2O3(0001) substrates with a ZnO buffer layer for heteroepitaxial growth and (2) thin GaN substrates for homoepitaxial growth. These studies revealed the first success of the selective growth of GaN for both substrates. Facets structures at boundaries of mask were investigated for various directions in both substrates.

引用

页码：859 / 862

页数：4

共 5 条

[1] HYDRIDE VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING A ZNO BUFFER LAYER [J].