Measurement of Source Resistance in Top-Contact Organic Thin-Film Transistors

被引：10

作者：

Singh, Vinay K. ^{[1
,2
]}

Agrawal, Ashish K. ^{[1
,2
]}

Mazhari, Baquer ^{[1
,2
]}

机构：

[1] Indian Inst Technol Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India

[2] Indian Inst Technol Kanpur, Samtel Ctr Display Technol, Kanpur 208016, Uttar Pradesh, India

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 03期

关键词：

Contact resistance; organic thin-film transistor (OTFT); pentacene; VOLTAGE;

D O I：

10.1109/LED.2011.2179633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for measurement of source resistance in top-contact organic thin-film transistors is proposed, which uses an additional floating contact adjacent to the source to sense the channel voltage under the contact. This allows the source resistance to be directly estimated from a single device structure. Two-dimensional numerical simulation results are used to validate the proposed method. Experimental results obtained with pentacene thin-film transistors are presented to illustrate the proposed measurement technique.

引用

页码：441 / 443

页数：3

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