Electronic and structural properties of large lattice-mismatched Si/BP superlattice

被引：0

作者：

Ozkapi, B. ^{[1
]}

Guler, S. ^{[1
]}

Dalgic, S. ^{[1
]}

机构：

[1] Trakya Univ, Dept Phys, Fac Sci, TR-22100 Edirne, Turkey

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2011年 / 13卷 / 11-12期

关键词：

Heterostructure; superlattice; Electrostatic potential; Electronic band structure; LIGHT-EMITTING-DIODES; BUFFER LAYER; GAN; SILICON; GROWTH; SUBSTRATE; SAPPHIRE; SI(111); BP; EPITAXY;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present results for electronic and structural properties of large lattice mismatched Si/BP superlattice by first principle calculations based on the density functional theory. A self-consistent pseudopotential calculation has been pet-formed at Si/BP (001) strained interface. We also analyze the total energy of ground state, lattice constant and electrostatic potential line up of heterojunction between Si/BP zincblende compounds. Finally, we have investigated electronic band structure and the effect to electrostatic potential line up of structural details at interface of this system.

引用

页码：1502 / 1506

页数：5

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