Electronic and structural properties of large lattice-mismatched Si/BP superlattice

被引:0
作者
Ozkapi, B. [1 ]
Guler, S. [1 ]
Dalgic, S. [1 ]
机构
[1] Trakya Univ, Dept Phys, Fac Sci, TR-22100 Edirne, Turkey
来源
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2011年 / 13卷 / 11-12期
关键词
Heterostructure; superlattice; Electrostatic potential; Electronic band structure; LIGHT-EMITTING-DIODES; BUFFER LAYER; GAN; SILICON; GROWTH; SUBSTRATE; SAPPHIRE; SI(111); BP; EPITAXY;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present results for electronic and structural properties of large lattice mismatched Si/BP superlattice by first principle calculations based on the density functional theory. A self-consistent pseudopotential calculation has been pet-formed at Si/BP (001) strained interface. We also analyze the total energy of ground state, lattice constant and electrostatic potential line up of heterojunction between Si/BP zincblende compounds. Finally, we have investigated electronic band structure and the effect to electrostatic potential line up of structural details at interface of this system.
引用
收藏
页码:1502 / 1506
页数:5
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