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Electronic and structural properties of large lattice-mismatched Si/BP superlattice
被引:0
作者:
Ozkapi, B.
[1
]
Guler, S.
[1
]
Dalgic, S.
[1
]
机构:
[1] Trakya Univ, Dept Phys, Fac Sci, TR-22100 Edirne, Turkey
来源:
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
|
2011年
/
13卷
/
11-12期
关键词:
Heterostructure;
superlattice;
Electrostatic potential;
Electronic band structure;
LIGHT-EMITTING-DIODES;
BUFFER LAYER;
GAN;
SILICON;
GROWTH;
SUBSTRATE;
SAPPHIRE;
SI(111);
BP;
EPITAXY;
D O I:
暂无
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We present results for electronic and structural properties of large lattice mismatched Si/BP superlattice by first principle calculations based on the density functional theory. A self-consistent pseudopotential calculation has been pet-formed at Si/BP (001) strained interface. We also analyze the total energy of ground state, lattice constant and electrostatic potential line up of heterojunction between Si/BP zincblende compounds. Finally, we have investigated electronic band structure and the effect to electrostatic potential line up of structural details at interface of this system.
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页码:1502 / 1506
页数:5
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