Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

被引：13

作者：

Cheng, C. H. ^{[1
,2
]}

Chen, P. C. ^{[3
]}

Wu, Y. H. ^{[3
]}

Wu, M. J. ^{[4
]}

Yeh, F. S. ^{[1
,2
]}

Chin, Albert ^{[5
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu, Taiwan

[3] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan

[4] Natl Chiao Tung Univ, Dept Mech Eng, Hsinchu, Taiwan

[5] Natl Chiao Tung Univ, Dept Elect Eng, Hsinchu, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2012年 / 73卷

关键词：

Hopping conduction; Uniformity; TaON; RRAM; GeOx; FILMS;

D O I：

10.1016/j.sse.2012.03.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10(6) cycling endurance are achieved in Ni/GeOx/Ta2O5-yNy/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta2O5-yNy for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：60 / 63

页数：4

共 19 条

[1]

[Anonymous], S VLSI TECHN

[2]

[Anonymous], 2010, P 2010 INT EL DEV M, DOI DOI 10.1109/IEDM.2010.5703392

[3] Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices [J].

Cagli, Carlo ;

Nardi, Federico ;

Ielmini, Daniele .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (08) :1712-1720

[4] Stacked GeO/SrTiOx Resistive Memory with Ultralow Resistance Currents [J].

Cheng, C. H. ;

Chin, Albert ;

Yeh, F. S. .

APPLIED PHYSICS LETTERS, 2011, 98 (05)

[5] Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance [J].

Cheng, Chun-Hu ;

Yeh, Fon-Shan ;

Chin, Albert .

ADVANCED MATERIALS, 2011, 23 (07) :902-+

[6] Picosecond photoresponse of carriers in Si ion-implanted Si [J].

Chin, A ;

Lee, KY ;

Lin, BC ;

Horng, S .

APPLIED PHYSICS LETTERS, 1996, 69 (05) :653-655

[7]

Kim MJ, 2010, INT EL DEVICES MEET

[8]

Lin SH, 2008, INT EL DEVICES MEET, P843

[9] Hopping conduction in nitrogen doped ZnO in the temperature range 10-300 K [J].

Majumdar, Sayanee ;

Banerji, P. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (06)

[10] Dual functional modification by N doping of Ta2O5: p-type conduction in visible-light-activated N-doped Ta2O5 [J].

Morikawa, Takeshi ;

Saeki, Shu ;

Suzuki, Tomiko ;

Kajino, Tsutomu ;

Motohiro, Tomoyoshi .

APPLIED PHYSICS LETTERS, 2010, 96 (14)

← 1 2 →