Engineering titanium and aluminum oxide composites using atomic layer deposition

被引:17
作者
Abaffy, N. Bilus [1 ]
McCulloch, D. G. [1 ]
Partridge, J. G. [2 ]
Evans, P. J. [3 ]
Triani, G. [3 ]
机构
[1] RMIT Univ, Sch Appl Sci, Melbourne, Vic 3001, Australia
[2] Univ Canterbury, Dept Elect & Comp Engn, Christchurch 1, New Zealand
[3] ANSTO, Inst Mat Engn, Menai, NSW 2234, Australia
关键词
X-RAY-ABSORPTION; ALK-EDGE XANES; THIN-FILMS; OPTICAL-PROPERTIES; K-EDGE; TI; (AL2O3)(X)(TIO2)(1-X); QUANTIFICATION; COORDINATIONS; GROWTH;
D O I
10.1063/1.3667134
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mixed metal oxides provide a convenient means to produce coatings with tailored physical properties. We investigate the possibility of synthesizing novel coatings of mixed titanium and aluminum oxide using atomic layer deposition (ALD). Results show that ALD films were prepared with compositions ranging between Al2O3 and TiO2 having refractive indices between 1.6 and 2.4 (at lambda = 550 nm) at low temperature. The microstructure and bonding environment within the films was investigated using electron microscopy and x-ray absorption spectroscopy. The films were amorphous, and the Ti and Al atoms were mixed at the atomic scale. The electrical breakdown characteristics of the films were measured and showed that films with intermediate compositions had poor leakage current properties, believed to be caused by the presence of distorted bonding configurations. This study shows that ALD can be used to deposit high quality thin films with tailored optical properties, particularly suitable for applications in which complex topographies are required. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3667134]
引用
收藏
页数:8
相关论文
共 43 条
[1]   Titanium isopropoxide as a precursor for atomic layer deposition:: characterization of titanium dioxide growth process [J].
Aarik, J ;
Aidla, A ;
Uustare, T ;
Ritala, M ;
Leskelä, M .
APPLIED SURFACE SCIENCE, 2000, 161 (3-4) :385-395
[2]   Multilayer Alumina and Titania Optical Coatings Prepared by Atomic Layer Deposition [J].
Abaffy, Nemo Bilus ;
Evans, Peter ;
Triani, Gerry ;
McCulloch, Dougal .
NANOSTRUCTURED THIN FILMS, 2008, 7041
[3]   Antireflective trilayer films fabricated using a filtered cathodic vacuum arc [J].
Abaffy, Nemo Bilus ;
Partridge, Jim G. ;
McCulloch, Dougal G. .
PHOTOVOLTAIC CELL AND MODULE TECHNOLOGIES II, 2008, 7045
[4]   XPS and NEXAFS studies of rare-earth doped amorphous sol-gel films [J].
Almeida, RM ;
Vasconcelos, HC ;
Goncalves, MC ;
Santos, LF .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 232 :65-71
[5]   Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices -: art. no. 042904 [J].
Auciello, O ;
Fan, W ;
Kabius, B ;
Saha, S ;
Carlisle, JA ;
Chang, RPH ;
Lopez, C ;
Irene, EA ;
Baragiola, RA .
APPLIED PHYSICS LETTERS, 2005, 86 (04) :042904-1
[6]  
Azzam R. M. A., 1977, Ellipsometry and Polarized Light
[7]   Electronic structure and growth of vanadium on TiO2(110) [J].
Biener, J ;
Bäumer, M ;
Wang, J ;
Madix, RJ .
SURFACE SCIENCE, 2000, 450 (1-2) :12-26
[8]   Characterization of mixed Ti/Al oxide thin films prepared by ion-beam-induced CVD [J].
Capitán, MJ ;
Stabel, A ;
Sánchez-Lopez, JC ;
Justo, A ;
González-Elipe, AR ;
Lefebvre, S ;
Fernández, A .
APPLIED SURFACE SCIENCE, 2000, 161 (1-2) :209-218
[9]   Electronic structure of cluster assembled nanostructured TiO2 by resonant photoemission at the Ti L2,3 edge [J].
Caruso, T. ;
Lenardi, C. ;
Agostino, R. G. ;
Amati, M. ;
Bongiorno, G. ;
Mazza, T. ;
Policicchio, A. ;
Formoso, V. ;
Maccallini, E. ;
Colavita, E. ;
Chiarello, G. ;
Finetti, P. ;
Sutara, F. ;
Skala, T. ;
Piseri, P. ;
Prince, K. C. ;
Milani, P. .
JOURNAL OF CHEMICAL PHYSICS, 2008, 128 (09)
[10]   TI 2P X-RAY-ABSORPTION IN TITANIUM DIOXIDES (TIO2) - THE INFLUENCE OF THE CATION SITE ENVIRONMENT [J].
CROCOMBETTE, JP ;
JOLLET, F .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (49) :10811-10821