Deposition of TiN, TiC and Ti1-xAlxN coatings by pulsed d.c. plasma enhanced chemical vapour deposition methods

被引:10
作者
Täschner, C
Ljungberg, B
Hoffmann, V
Vogt, C
Leonhardt, A
机构
[1] Inst Festkorper & Werkstofforsch, D-01171 Dresden, Germany
[2] AB Sandvik Coromant, S-12680 Stockholm, Sweden
关键词
pulsed d.c. plasma enhanced chemical vapour deposition; TiN; TiC; Ti1-xAlxN;
D O I
10.1016/S0257-8972(01)01117-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Unipolar and bipolar pulsed d.c. plasma enhanced chemical vapour deposition techniques have been used under various process conditions to deposit hard crystalline (Ti,AI)N, TiC and TiN coatings on steel and WC/Co hard metal substrates at temperatures between 500 and 700 degreesC. As process gases mixtures of titanium tetrachloride (TiCl4), aluminium trichloride (AlCl3) and nitrogen or methane/hydrogen/argon were applied. The golden, violet grey or dark grey coloured TiN, (TiAl)N, TiC coatings deposited by varying the substrate temperature, plasma power density, excitation mode, and titanium to aluminium ratio in the gas phase were investigated with respect to their composition and structure. At substrate temperatures up to 700 degreesC and gas mixture ratios of Ti/Al = 0.3-0.5 using the unipolar pulsed d.c. method cubic (Ti,ADN coatings with different aluminium and titanium content could be deposited. At constant gas phase ratios and plasma parameters an increased substrate temperature resulted in an increased titanium content. For the bipolar d.c. excitation mode higher aluminium trichloride concentration had to be used in order to obtain the same composition as for the unipolar case. Besides the cubic (Ti,AI)N phase, hexagonal AIN was found in samples prepared at 700 degreesC and 4 mbar by XRD measurements. The crystallite size of the (Ti,AI)N coatings deposited by unipolar and bipolar activation were estimated to be approximately 10 nm. The hardness HV[0.02] was found to be in the range of 25-30 GPa for Ti1-xAlxN, up to 32 GPa for TiN, and up to 40 GPa for TiC. Coating thickness and element composition were determined by glow discharge optical emission spectroscopy depth profile analysis. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:823 / 828
页数:6
相关论文
共 23 条
[1]   New PACVD-hard material layers for wear protection of high-speed steel [J].
Bartsch, K ;
Leonhardt, A ;
Langer, U ;
Kunanz, K .
SURFACE & COATINGS TECHNOLOGY, 1997, 94-5 (1-3) :168-173
[2]  
Fredriksson E., 1993, Journal of Chemical Vapor Deposition, V1, P333
[3]   Influence of process parameters on the growth of TiN in different sized plasma-assisted chemical vapor deposition reactors [J].
Hardt, P ;
Eckel, M ;
Schmidt, M ;
Wulff, H .
SURFACE & COATINGS TECHNOLOGY, 1999, 120 :238-243
[4]   TiAlN and TiAlCN deposition in an industrial PaCVD-plant [J].
Heim, D ;
Hochreiter, R .
SURFACE & COATINGS TECHNOLOGY, 1998, 98 (1-3) :1553-1556
[5]   Electron microscopy analysis of the microstructure of Ti1-xAlxN alloy thin films prepared using a chemical vapour deposition method [J].
Ikeda, S ;
Gilles, S ;
Chenevier, B .
THIN SOLID FILMS, 1998, 315 (1-2) :257-262
[6]   Properties of TiN-TiG multilayer coatings using plasma-assisted chemical vapor deposition [J].
Kim, DJ ;
Cho, YR ;
Lee, MJ ;
Hong, JR ;
Kik, YK ;
Lee, KH .
SURFACE & COATINGS TECHNOLOGY, 1999, 116 :906-910
[7]   INDUSTRIAL DEPOSITION OF BINARY, TERNARY, AND QUATERNARY NITRIDES OF TITANIUM, ZIRCONIUM, AND ALUMINUM [J].
KNOTEK, O ;
MUNZ, WD ;
LEYENDECKER, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2173-2179
[8]   THE STRUCTURE AND COMPOSITION OF TI-ZR-N, TI-AL-ZR-N AND TI-AL-V-N COATINGS [J].
KNOTEK, O ;
BOHMER, M ;
LEYENDECKER, T ;
JUNGBLUT, F .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1988, 106 :481-488
[9]   (TI1-XALX)N COATINGS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION [J].
LEE, SH ;
RYOO, HJ ;
LEE, JJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1994, 12 (04) :1602-1607
[10]   Structural analysis of AlN and (Ti1-xAlx)N coatings made by plasma enhanced chemical vapor deposition [J].
Lee, SH ;
Kim, BJ ;
Kim, HH ;
Lee, JJ .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) :1469-1473