Spin-polarized Goos-Hanchen displacement in a hybrid magnetic-electric barrier nanostructure modulated by spin-orbit couplings

被引：13

作者：

Kong, Yong-Hong ^{[1
]}

Liu, Xu-Hui ^{[1
]}

Li, Ai-Hua ^{[1
]}

Gong, Yan-Jun ^{[1
]}

机构：

[1] Hunan Univ Sci & Engn, Coll Sci, Yongzhou 425100, Peoples R China

来源：

VACUUM | 2019年 / 159卷

关键词：

Hybrid MEB nanostructure; Goos-Htinchen effect; Spin polarization; Spatial spin splitter; SPATIAL SPLITTER; SCHOTTKY METAL; SEMICONDUCTOR NANOSTRUCTURE; BEAM SPLITTER; MAGNETORESISTANCE; FERROMAGNET; SHIFTS; FIELD; GAS;

D O I：

10.1016/j.vacuum.2018.10.068

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin-polarized Goos-Hanchen (GH) displacement is calculated for electrons in a hybrid magnetic-electric-barrier (MEB) nanostructure modulated by spin-orbit couplings (SOCs), which can be realized experimentally by the deposition of a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe in parallel configuration on the top of the GaAs/AlxGa1-xAs heterostructure. Both Zeeman interaction (ZI) and SOC are taken into account. It is shown that ZI has less contribution to spin-polarized GH displacement than SOC due to a small g-factor for GaAs. It is also shown that spin-polarized GH displacement can be controlled by Rashba or Dresselhause SOC-interfacial confining electric field or strain engineering, which results hence in a tunable spatial spin splitter for spintronics device applications.

引用

页码：410 / 413

页数：4

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