Micro-Hall Sensors Based on Two-Dimensional Molybdenum Diselenide

Sensors and electronic devices based on semiconductors in their two-dimensional forms have many advantages. In this paper, we studied micro-Hall sensors based on two-dimensional molybdenum diselenide for the first time. The micro-Hall sensor based on a Ti/MoSe2/Ti structure clearly showed a linear dependence of the Hall voltage as a function of the magnetic field, with a magnetic sensitivity of similar to 16 V/AT. The magnetic sensitivity was higher in the Au/MoSe2/Au structure, with a maximum value of similar to 120 V/AT at a bias current of 100 mA; the minimum detectable magnetic field was found to be 1.45 mu T/Hz(1/2) at the same current value, making our new micro-Hall sensor a very good candidate for magnetic sensing applications.