Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance

被引：31

作者：

Manoi, Athikom ^{[1
]}

Pomeroy, James W. ^{[1
]}

Lossy, Richard ^{[2
]}

Pazirandeh, Reza ^{[2
]}

Wuerfl, Joachim ^{[2
]}

Uren, Michael J. ^{[3
]}

Martin, Trevor ^{[3
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

[3] QinetiQ Ltd, Malvern WR14 3PS, Worcs, England

来源：

SOLID-STATE ELECTRONICS | 2011年 / 57卷 / 01期

关键词：

Thermal crosstalk; Heat diffusion; Multifinger AlGaN/GaN HEMTs; Transient temperature; Raman thermography; Device characteristics; Non-linearity; RAMAN TEMPERATURE-MEASUREMENTS; DEVICES; TRANSISTORS;

D O I：

10.1016/j.sse.2010.11.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal dynamics of multifinger AlGaN/GaN high electron mobility transistors (HEMTs) with varying gate pitch was investigated using time-resolved Raman thermography. An identical temperature rise was measured in all gate fingers within the first similar to 500 ns duration of electrical pulses. Gate finger temperature differences only emerge after 500 ns, due to the onset of thermal crosstalk. This thermal crosstalk onset delay is attributed to the finite rate of heat diffusion between gate fingers. Reducing the device gate pitch was found to increase the magnitude of transient thermal crosstalk. Implications of each gate finger within a multifinger HEMT having a different transient temperature are discussed in the context of device characteristics. The experimental results are compared to time-domain three-dimensional finite difference heat diffusion simulations. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：14 / 18

页数：5

共 23 条

[1] A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series [J].