Time-resolved photoluminescence measurements of InP/ZnS quantum dots

被引：12
作者：
Pham Thi Thuy [1 ,2 ]
Ung Thi Dieu Thuy [1 ]
Tran Thi Kim Chi [1 ]
Le Quang Phuong [1 ]
Nguyen Quang Liem [1 ]
Li, Liang
Reiss, Peter
机构：
[1] VAST, Inst Mat Sci, 18 Hoang Quoc Viet, Hanoi, Vietnam
[2] Baria Vungtau Commune Coll, Vungtau, Vietnam
来源：
APCTP-ASEAN WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY (AMSN08) | 2009年 / 187卷
关键词：
Time-resolved photoluminescence; quantum dots; InP/ZnS; COLLOIDAL INP NANOCRYSTALS;
D O I：
10.1088/1742-6596/187/1/012014
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper reports the results on the time-resolved photoluminescence study of InP/ZnS core/shell quantum dots. The ZnS shell played a decisive role to passivate imperfections on the surface of InP quantum dots, consequently giving rise to a strong enhancement of the photoluminescence from the InP core. Under appropriate excitation conditions, not only the emission from the InP core but also that from the ZnS shell was observed. The emission peak in InP core quantum dots varied as a function of quantum dots size, ranging in the 600 - 700 nm region; while the ZnS shell showed emission in the blue region around 470 nm, which is interpreted as resulting from defects in ZnS.
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页数：5
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