Design and Simulation of Intermediate Band Solar Cell With Ultradense Type-II Multilayer Ge/Si Quantum Dot Superlattice

被引:7
作者
Tsai, Yi-Chia [1 ]
Lee, Ming-Yi [1 ]
Li, Yiming [1 ]
Samukawa, Seiji [2 ,3 ]
机构
[1] Natl Chiao Tung Univ, Parallel & Sci Comp Lab, Dept Elect & Comp Engn, Inst Commun Engn, Hsinchu 300, Taiwan
[2] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan
[3] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
关键词
Conversion efficiency; density of states (DoSs); Ge/Si quantum dot (QD); layer distance; minibands; multilayer; solar cell; superlattice; ELECTRONIC-STRUCTURE; EFFICIENCY; LIMIT; SI;
D O I
10.1109/TED.2017.2755069
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We studied the miniband dependence on the structural parameters and shape in type-II multilayer germanium (Ge)/silicon (Si) quantum dot superlattice (QDSL) solar cell. A maximum tunable range of ground-state energy is 19% by tuning layer distance down to 0.5 nm, whereas 24.5% is achieved by adjusting the horizontal dot-to-dot spacing down to 0.3 nm. The reduction of effective bandgap is severe for cylindrical QDs than ellipsoidal and conical QDs in the ultradense QDSL, thus leading to a relatively lower conversion efficiency. On average, the thickness of QD shows a negative correlation to conversion efficiency. We observed a high conversion efficiency of 27.22% in a bilayer conical QDSL under an AM1.5 spectral irradiance and one sun illumination.
引用
收藏
页码:4547 / 4553
页数:7
相关论文
共 32 条
[1]   Electrical and thermal conductivity of Ge/Si quantum dot superlattices [J].
Bao, Y ;
Liu, WL ;
Shamsa, M ;
Alim, K ;
Balandin, AA ;
Liu, JL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (06) :G432-G435
[2]   Ge dots and nanostructures grown epitaxially on Si [J].
Baribeau, JM ;
Wu, X ;
Rowell, NL ;
Lockwood, DJ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (08) :R139-R174
[3]   IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS [J].
BLOCHL, PE ;
JEPSEN, O ;
ANDERSEN, OK .
PHYSICAL REVIEW B, 1994, 49 (23) :16223-16233
[4]   Impurity photovoltaic effect: Fundamental energy conversion efficiency limits [J].
Brown, AS ;
Green, MA .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (03) :1329-1336
[5]   Third-generation photovoltaics [J].
Conibeer, Gavin .
MATERIALS TODAY, 2007, 10 (11) :42-50
[6]   Influence of the overlap between the absorption coefficients on the efficiency of the intermediate band solar cell [J].
Cuadra, L ;
Martí, A ;
Luque, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) :1002-1007
[7]   Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures [J].
Dashiell, MW ;
Denker, U ;
Müller, C ;
Costantini, G ;
Manzano, C ;
Kern, K ;
Schmidt, OG .
APPLIED PHYSICS LETTERS, 2002, 80 (07) :1279-1281
[8]   Electronic structure of Ge/Si quantum dots [J].
Dvurechenskii, AV ;
Nenashev, AV ;
Yakimov, AI .
NANOTECHNOLOGY, 2002, 13 (01) :75-80
[9]   Three-dimensional Si/Ge quantum dot crystals [J].
Gruetzmacher, Detlev ;
Fromherz, Thomas ;
Dais, Christian ;
Stangl, Julian ;
Mueller, Elisabeth ;
Ekinci, Yasin ;
Solak, Harun H. ;
Sigg, Hans ;
Lechner, Rainer T. ;
Wintersberger, Eugen ;
Birner, Stefan ;
Holy, Vaclav ;
Bauer, Guenther .
NANO LETTERS, 2007, 7 (10) :3150-3156
[10]   Simulation study of type-II Ge/Si quantum dot for solar cell applications [J].
Hu, Weiguo ;
Rahman, Mohammad Maksudur ;
Lee, Ming-Yi ;
Li, Yiming ;
Samukawa, Seiji .
JOURNAL OF APPLIED PHYSICS, 2013, 114 (12)