Design and Simulation of Intermediate Band Solar Cell With Ultradense Type-II Multilayer Ge/Si Quantum Dot Superlattice

被引：7

作者：

Tsai, Yi-Chia ^{[1
]}

Lee, Ming-Yi ^{[1
]}

Li, Yiming ^{[1
]}

Samukawa, Seiji ^{[2
,3
]}

机构：

[1] Natl Chiao Tung Univ, Parallel & Sci Comp Lab, Dept Elect & Comp Engn, Inst Commun Engn, Hsinchu 300, Taiwan

[2] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 11期

关键词：

Conversion efficiency; density of states (DoSs); Ge/Si quantum dot (QD); layer distance; minibands; multilayer; solar cell; superlattice; ELECTRONIC-STRUCTURE; EFFICIENCY; LIMIT; SI;

D O I：

10.1109/TED.2017.2755069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the miniband dependence on the structural parameters and shape in type-II multilayer germanium (Ge)/silicon (Si) quantum dot superlattice (QDSL) solar cell. A maximum tunable range of ground-state energy is 19% by tuning layer distance down to 0.5 nm, whereas 24.5% is achieved by adjusting the horizontal dot-to-dot spacing down to 0.3 nm. The reduction of effective bandgap is severe for cylindrical QDs than ellipsoidal and conical QDs in the ultradense QDSL, thus leading to a relatively lower conversion efficiency. On average, the thickness of QD shows a negative correlation to conversion efficiency. We observed a high conversion efficiency of 27.22% in a bilayer conical QDSL under an AM1.5 spectral irradiance and one sun illumination.

引用

页码：4547 / 4553

页数：7

共 32 条

[1] Electrical and thermal conductivity of Ge/Si quantum dot superlattices [J].