Non-stoichiometry and non-homogeneity in InN

被引：26

作者：

Scott, K ^{[1
]}

Butcher, A ^{[1
]}

Wintrebert-Fouquet, M ^{[1
]}

Chen, PPT ^{[1
]}

Prince, KE ^{[1
]}

Timmers, H ^{[1
]}

Shrestha, SK ^{[1
]}

Shubina, TV ^{[1
]}

Ivanov, SV ^{[1
]}

Wuhrer, R ^{[1
]}

Phillips, MR ^{[1
]}

Monemar, B ^{[1
]}

机构：

[1] Macquarie Univ, Dept Phys, N Ryde, NSW 2109, Australia

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期

关键词：

INDIUM NITRIDE FILMS; OPTICAL BAND-GAP; GROWTH;

D O I：

10.1002/pssc.200461387

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN samples grown by remote plasma enhanced chemical vapour deposition show a change in band-gap between 1.8 and 1.0 eV that is not due to the Moss-Burstein effect, oxygen inclusion or quantum size effects, but for which changes in the growth temperature result in a strong change in stoichiometry. Material non-homogenity and non-stoichiometry appear to be general problems for InN growth. Excess nitrogen can be present at very high levels and indium rich material is also found. This work shows that the extent of the Moss-Burstoin effect will have to be reassessed for InN. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2263 / 2266

页数：4

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