A laser based process for the formation of a local back surface field for n-type silicon solar cells

被引：30

作者：

Jaeger, Ulrich ^{[1
]}

Suwito, Dominik ^{[1
]}

Benick, Jan ^{[1
]}

Janz, Stefan ^{[1
]}

Preu, Ralf ^{[1
]}

机构：

[1] Fraunhofer ISE, D-79110 Freiburg, Germany

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 11期

关键词：

Laser processing; N-type silicon; Silicon carbide; Local back surface field; CRYSTALLINE SILICON; OPTICAL-ABSORPTION; LIFETIME; RECOMBINATION;

D O I：

10.1016/j.tsf.2011.01.237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the development of a laser doping process for the formation of a local back surface field (LBSF) for n-type silicon solar cells. Local point contacts are formed by applying a laser process to a doped, passivating layer of amorphous silicon carbide (PassDop layer). The exposure to laser radiation results in local doping and opening of the passivation layer at the same time. By variation of the laser parameters and the dopant content in the layer, strength and depth of the doping can be controlled. Both parameters are varied and the formation of a LBSF structure on lifetime samples is investigated. High dopant content in the passivation layer and comparably low laser fluencies yield the best electrical results, evidencing the formation of an effective LBSF in combination with a restricted laser induced damage in the silicon crystal. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3827 / 3830

页数：4

共 18 条

[1] Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing [J].