Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector

被引：58

作者：

Huang, Hai ^{[1
,2
]}

Wang, Xudong ^{[1
]}

Wang, Peng ^{[1
]}

Wu, Guangjian ^{[1
,2
]}

Chen, Yan ^{[1
,2
]}

Meng, Caimin ^{[1
]}

Liao, Lei ^{[3
,4
]}

Wang, Jianlu ^{[1
,2
]}

Hu, Weida ^{[1
,2
]}

Shen, Hong ^{[1
,2
]}

Lin, Tie ^{[1
,2
]}

Sun, Jinglan ^{[1
,2
]}

Meng, Xiangjian ^{[1
,2
]}

Chen, Xiaoshuang ^{[1
,2
]}

Chu, Junhao ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China

[2] Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China

[3] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China

[4] Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China

来源：

RSC ADVANCES | 2016年 / 6卷 / 90期

关键词：

FIELD-EFFECT TRANSISTORS; BAND-GAP; ELECTRONICS; PHOTOTRANSISTORS; GENERATION; SWITCHES;

D O I：

10.1039/c6ra18238k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Two dimensional material based photodetectors have attracted wide attention in recent years. In this work, a few-layer MoTe2 based phototransistor with a ferroelectric polymer P(VDF-TrFE) topgate is fabricated. The remanent polarization of the ferroelectrics could deplete the channel effectively to decrease the dark current of the device by more than one magnitude. As a result, the MoTe2 phototransistor has an appreciable photoresponse for visible light and near infrared. The device has a broad photoresponse range (0.6-1.5 mu m), the responsivity and detectivity reach 16.4 mA W-1 and 1.94 x 10(8) Jones for 1060 nm light. The device works without an external gate voltage, which makes for higher reliability and lower power dissipation for practical application.

引用

页码：87416 / 87421

页数：6

共 38 条

[1] Tunable Carrier Type and Density in Graphene/PbZr0.2Ti0.8O3 Hybrid Structures through Ferroelectric Switching [J].

Baeumer, Christoph ;

Rogers, Steven P. ;

Xu, Ruijuan ;

Martin, Lane W. ;

Shim, Moonsub .

NANO LETTERS, 2013, 13 (04) :1693-1698

[2]

Brennan C. J., 1992, Integrated Ferroelectrics, V2, P73, DOI 10.1080/10584589208215733

[3] Photocurrent generation with two-dimensional van der Waals semiconductors [J].

Buscema, Michele ;

Island, Joshua O. ;

Groenendijk, Dirk J. ;

Blanter, Sofya I. ;

Steele, Gary A. ;

van der Zant, Herre S. J. ;

Castellanos-Gomez, Andres .

CHEMICAL SOCIETY REVIEWS, 2015, 44 (11) :3691-3718

[4] Large variations in both dark- and photoconductivity in nanosheet networks as nanomaterial is varied from MoS2 to WTe2 [J].

Cunningham, Graeme ;

Hanlon, Damien ;

McEvoy, Niall ;

Duesberg, Georg S. ;

Coleman, Jonathan N. .

NANOSCALE, 2015, 7 (01) :198-208

[5] Exfoliated multilayer MoTe2 field-effect transistors [J].

Fathipour, S. ;

Ma, N. ;

Hwang, W. S. ;

Protasenko, V. ;

Vishwanath, S. ;

Xing, H. G. ;

Xu, H. ;

Jena, D. ;

Appenzeller, J. ;

Seabaugh, A. .

APPLIED PHYSICS LETTERS, 2014, 105 (19)

[6]

Fiori G, 2014, NAT NANOTECHNOL, V9, P768, DOI [10.1038/nnano.2014.207, 10.1038/NNANO.2014.207]

[7] Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature [J].

Guo, Nan ;

Hu, Weida ;

Liao, Lei ;

Yip, SenPo ;

Ho, Johnny C. ;

Miao, Jinshui ;

Zhang, Zhi ;

Zou, Jin ;

Jiang, Tao ;

Wu, Shiwei ;

Chen, Xiaoshuang ;

Lu, Wei .

ADVANCED MATERIALS, 2014, 26 (48) :8203-8209

[8] Functional Organic Field-Effect Transistors [J].

Guo, Yunlong ;

Yu, Gui ;

Liu, Yunqi .

ADVANCED MATERIALS, 2010, 22 (40) :4427-4447

[9] Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors [J].

Hu, PingAn ;

Wen, Zhenzhong ;

Wang, Lifeng ;

Tan, Pingheng ;

Xiao, Kai .

ACS NANO, 2012, 6 (07) :5988-5994

[10] Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts [J].

Hu, Youfan ;

Zhou, Jun ;

Yeh, Ping-Hung ;

Li, Zhou ;

Wei, Te-Yu ;

Wang, Zhong Lin .

ADVANCED MATERIALS, 2010, 22 (30) :3327-3332

← 1 2 3 4 →