Mobility and bulk electron-phonon interaction in two-dimensional materials

被引：0

作者：

Gunst, Tue ^{[1
,2
]}

Brandbyge, Mads ^{[1
,2
]}

Markussen, Troels ^{[3
]}

Stokbro, Kurt ^{[3
]}

机构：

[1] DTU Nanotech, Lyngby, Denmark

[2] Tech Univ Denmark, CNG, Lyngby, Denmark

[3] QuantumWise AS, Copenhagen, Denmark

来源：

2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2015年

关键词：

GRAPHENE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present calculations of the phonon-limited mobility in intrinsic n-type monolayer graphene, silicene and MoS2. The material properties, including the electron-phonon interaction, are calculated from first principles. Unlike graphene, the carriers in silicene show strong interaction with the out-of-plane modes. However, we find that graphene only has a slightly higher mobility compared to silicene. For MoS2 we obtain several orders of magnitude lower mobilities and in agreement with other recent theoretical results. The simulations illustrate the predictive capabilities of the newly implemented Boltzmann Transport Equation (BTE) solver in the Atomistix ToolKit (ATK) simulation tool.

引用

页码：32 / 35

页数：4

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