Photometric and Electrical Characterizations of Large-Area OLEDs Aged Under Thermal and Electrical Stresses

被引：9

作者：

Alchaddoud, Alaa ^{[1
]}

Canale, Laurent ^{[2
]}

Ibrahem, Ghassan ^{[3
]}

Zissis, Georges ^{[1
]}

机构：

[1] Toulouse Univ, UPS LAPLACE Lab, F-31013Y Toulouse, France

[2] Toulouse Univ, CNRS, LAPLACE Lab, F-31013 Toulouse, France

[3] Al Baath Univ, Ctr Renewable Energy, Dept Elect Energy, Homs, Syria

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2019年 / 55卷 / 01期

关键词：

Aging; degradation; electrical characterization; electrical stress; organic light-emitting diode (OLED); photometric; signature; thermal stress; DEGRADATION MECHANISMS; SMALL-MOLECULE; LIGHT; OPERATION;

D O I：

10.1109/TIA.2018.2864939

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The aim of this paper is to identify the electrical signatures of degradations of large-area organic light-emitting diodes (OLEDs) (41 cm(2) active area), subjected to various stress conditions. Three Philips GL55 OLEDs were stressed under three distinct temperature values: 23 degrees C, 40 degrees C, and 60 degrees C at a stress current density of J = 15 mA/cm(2) (rated current density: Jn = 9.49 mA/cm(2)). Under thermal and electrical stresses, an increase of the operating voltage was observed with stress time but thermal stress alone did neither affect the operating voltage nor the luminance values up to 60 degrees C.

引用

页码：991 / 995

页数：5

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