Interface structure and wetting behaviour of Cu/Ti3SiC2 system

被引：47

作者：

Lu, J. R. ^{[1
]}

Zhou, Y. ^{[1
]}

Zheng, Y. ^{[1
]}

Li, H. Y. ^{[1
]}

Li, S. B. ^{[1
]}

机构：

[1] Beijing Jiaotong Univ, Sch Mech & Elect Control Engn, Beijing 100044, Peoples R China

来源：

ADVANCES IN APPLIED CERAMICS | 2015年 / 114卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Cu/Ti3SiC2; Wettability; Interface; Microstructure; LIQUID-METALS; MECHANICAL-PROPERTIES; TRIPLE LINE; TI3SIC2; COMPOSITES; CU; TEMPERATURE; MICROSTRUCTURE; INDENTATIONS; STABILITY;

D O I：

10.1179/1743676114Y.0000000185

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Wetting behaviour of a Cu/Ti3SiC2 system was investigated by the sessile drop technique under a vacuum atmosphere. Contact angles between Cu and Ti3SiC2 changed from 95 to 15 degrees as temperatures increased from 1089 to 1270 degrees C. Two distinct reaction layers consisting of different contents of Cu, TiCx, Ti3SiC2 and CuxSiy intermetallics were formed at the interface of Cu and Ti3SiC2. The formation of the interface layers contributes to the improvement of the wettability of the system. The dissolution of Si from theTi(3)SiC(2) into the molten Cu at high temperature plays a dominant role in the wetting behaviour of Cu/Ti3SiC2 systems.

引用

页码：39 / 44

页数：6

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