Resistive switching of silicon-silver thin film devices in flexible substrates

被引:6
作者
Dias, C. [1 ,2 ]
Leitao, D. C. [3 ,4 ]
Freire, C. S. R. [5 ]
Gomes, H. L. [6 ,7 ]
Cardoso, S. [3 ,4 ]
Ventura, J. [1 ,2 ]
机构
[1] Univ Porto, IFIMUP, Porto, Portugal
[2] Univ Porto, Dept Phys & Astron, Fac Sci, Porto, Portugal
[3] INESC Microsyst & Nanotechnol, Lisbon, Portugal
[4] Tecn Univ Lisbon, Dept Phys, Lisbon, Portugal
[5] Univ Aveiro, CICECO Aveiro Inst Mat, Dept Chem, Aveiro, Portugal
[6] Inst Telecomunicacoes, Lisbon, Portugal
[7] Univ Algarve, Fac Ciencias & Tecnol, Faro, Portugal
关键词
resistive switching; memristors; flexible electronics; cellulose-based electronics; metallic filaments; SYNAPTIC PLASTICITY; NONVOLATILE MEMORY; RESISTANCE; HYBRID;
D O I
10.1088/1361-6528/ab5eb7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Novel applications for memory devices demand nanoscale flexible structures. In particular, resistive switching (RS) devices are promising candidates for wearable and implantable technologies. Here, the Pt/Si/Ag/TiW metal-insulator-metal structure was fabricated and characterized on top of flexible substrates using a straightforward microfabrication process. We also showed that these substrates are compatible with sputtering deposition. RS was successfully achieved using both commercial cellulose cleanroom paper and bacterial cellulose, and polymer (PET) substrates. The bipolar switching behavior was observed for both flat and bent (under a radius of 3.5 mm) configurations. The observed phenomenon was explained by the formation/rupture of metallic Ag filaments in the otherwise insulating Si host layer.
引用
收藏
页数:9
相关论文
共 51 条
[1]   ZrO2 flexible printed resistive (memristive) switch through electrohydrodynamic printing process [J].
Awais, Muhammad Naeem ;
Kim, Hyung Chan ;
Doh, Yang Hui ;
Choi, Kyung Hyun .
THIN SOLID FILMS, 2013, 536 :308-312
[2]   Metal-Free, Single-Polymer Device Exhibits Resistive Memory Effect [J].
Bhansali, Unnat S. ;
Khan, Mohd A. ;
Cha, Dongkyu ;
AlMadhoun, Mahmoud N. ;
Li, Ruipeng ;
Chen, Long ;
Amassian, Aram ;
Odeh, Ihab N. ;
Alshareef, Husam N. .
ACS NANO, 2013, 7 (12) :10518-10524
[3]   All-nanocellulose nonvolatile resistive memory [J].
Celano, Umberto ;
Nagashima, Kazuki ;
Koga, Hirotaka ;
Nogi, Masaya ;
Zhuge, Fuwei ;
Meng, Gang ;
He, Yong ;
De Boeck, Jo ;
Jurczak, Malgorzata ;
Vandervorst, Wilfried ;
Yanagida, Takeshi .
NPG ASIA MATERIALS, 2016, 8 :e310-e310
[4]   Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance [J].
Cheng, Chun-Hu ;
Yeh, Fon-Shan ;
Chin, Albert .
ADVANCED MATERIALS, 2011, 23 (07) :902-+
[5]  
Cho B, 2011, 2011 IEEE NAN MAT DE, P295, DOI [10.1109/NMDC.2011.6155362, DOI 10.1109/NMDC.2011.6155362]
[6]   Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices [J].
Cho, Byungjin ;
Yun, Jin-Mun ;
Song, Sunghoon ;
Ji, Yongsung ;
Kim, Dong-Yu ;
Lee, Takhee .
ADVANCED FUNCTIONAL MATERIALS, 2011, 21 (20) :3976-3981
[7]   Transfer of functional memory devices to any substrate [J].
Choi, Ji-Min ;
Kim, Moon-Seok ;
Seol, Myeong-Lok ;
Choi, Yang-Kyu .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2013, 7 (05) :326-331
[8]   Bipolar resistive switching in Si/Ag nanostructures [J].
Dias, C. ;
Lv, H. ;
Picos, R. ;
Aguiar, P. ;
Cardoso, S. ;
Freitas, P. P. ;
Ventura, J. .
APPLIED SURFACE SCIENCE, 2017, 424 :122-126
[9]   Si/a-Si core/shell nanowires as nonvolatile crossbar switches [J].
Dong, Yajie ;
Yu, Guihua ;
McAlpine, Michael C. ;
Lu, Wei ;
Lieber, Charles M. .
NANO LETTERS, 2008, 8 (02) :386-391
[10]   Fabrication of Flexible Au/ZnO/ITO/PET Memristor Using Dilute Electrodeposition Method [J].
Fauzi, F. B. ;
Ani, M. H. ;
Othman, R. ;
Azhar, A. Z. A. ;
Mohamed, M. A. ;
Herman, S. H. .
4TH INTERNATIONAL CONFERENCE ON ELECTRONIC DEVICES, SYSTEMS AND APPLICATIONS 2015 (ICEDSA), 2015, 99