Photoluminescence from B-doped Si nanocrystals

被引：104

作者：

Fujii, M ^{[1
]}

Hayashi, S ^{[1
]}

Yamamoto, K ^{[1
]}

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Kobe, Hyogo 657, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 12期

关键词：

D O I：

10.1063/1.367976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron-doped Si nanocrystals as small as 3.5 nm were prepared and their photoluminescence (PL) properties were studied. The PL properties were found to be very sensitive to the B concentration. For the sample without B doping the temperature-dependent shift of the PL peak was almost the same as that of the bulk band gap. As the B concentration increased, the temperature dependence deviated from that of the bulk band gap, and the peak exhibited a low-energy shift as the temperature decreased. The anomalous temperature dependence is considered to be due to the contribution of the PL from excitons bound to the neutral B states. (C) 1998 American Institute of Physics.

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页码：7953 / 7957

页数：5

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