Photo- and electroluminescence features of films and field effect transistors based on inorganic perovskite nanocrystals embedded in a polymer matrix

被引：14

作者：

Aleshin, Andrey N. ^{[1
]}

Shcherbakov, Igor P. ^{[1
]}

Chikalova-Luzina, Olga P. ^{[1
]}

Matyushkin, Leo B. ^{[2
]}

Ovezov, Maksat K. ^{[1
]}

Ershova, Anastasia M. ^{[1
]}

Trapeznikova, Irina N. ^{[1
]}

Petrov, Vasily N. ^{[1
]}

机构：

[1] Ioffe Inst, 26 Polytech Skaya Str, St Petersburg 194021, Russia

[2] St Petersburg Electrotech Univ, St Petersburg, Russia

来源：

SYNTHETIC METALS | 2020年 / 260卷

关键词：

Semiconducting polymers; Inorganic perovskite nanocrystals; Field-effect transistors; Charge carrier mobility; Photo- and electroluminescence; Energy transfer; ENERGY-TRANSFER; COMPOSITE FILMS; POLYFLUORENE;

D O I：

10.1016/j.synthmet.2020.116291

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical and electrical properties of films and field-effect transistors (FETs) based on pure MEH-PPV, neat CsPbBr3 nanocrystals (NCs), and MEH-PPV:CsPbBr3 NCs composites with different contents of CsPbBr3 NCs are investigated. The films were characterized by absorbance, atomic-force microscope and current-voltage characteristics (I-Vs) techniques. Relative PL and EL intensities and PL spectra of the pure MEH-PPV, neat CsPbBr3 NCs and MEH-PPV:CsPbBr3 NCs films were measured at 300 K at various levels of optical and electrical excitation power; these dependencies of the PL and EL intensities turned out to be sublinear and superlinear respectively. FETs based on MEH-PPV:CsPbBr3 NCs (1:1) films exhibit I-Vs at 290 - 100 K a dominant hole transport mechanism. The mobility of charge carriers was determined at 290 K for neat CsPbBr3 NCs (for electrons: 2.7 10(-2) cm(2)/Vs) and MEH-PPV:CsPbBr3 NCs (1:1) (for holes: 9 cm(2)/Vs). The temperature dependence of the hole mobility mu(FET)(T) of FETs based on MEH-PPV:CsPbBr3 NCs (1:1) films characteristic of the hopping mode. It was found that the superlinearity of the dependence of EL of MEH-PPV:CsPbBr3 NCs LE-FETs at 290 K increases with increasing concentration of CsPbBr3 NCs due to efficient energy transfer between CsPbBr3 NCs and the MEH-PPV polymer matrix, and also because of the probability of electron tunneling through the potential barrier to electrode. It is expected that the obtained MEH-PPV:CsPbBr3 NCs nanocomposite films will be useful for efficient applications in nanotechnology LEDs, FETs and LE-FETs.

引用

页数：8

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