Biristor-Bistable Resistor Based on a Silicon Nanowire

被引：49

作者：

Han, Jin-Woo ^{[1
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 08期

关键词：

Bistable resistor (biristor); n-p-n; p-n-p; silicon nanowire; two terminals; BIPOLAR-TRANSISTORS; CELL;

D O I：

10.1109/LED.2010.2051405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A circuit element, named bistable resistor (or biristor), is proposed. The biristor has two stable resistance states. A high resistance state and low leakage current are maintained until an applied voltage reaches a latch-up voltage to trigger an avalanche effect. A low resistance state and high current are attained at voltage above the latch up. The low resistance state is latched until the applied voltage decreases down to the latch-down voltage. Bistable resistance states are achieved between the latch-down and the latch-up voltage. In addition, an optical stimulus appears to reduce the latch voltages.

引用

页码：797 / 799

页数：3

共 9 条

[1] SINGLE-TRANSISTOR LATCH IN SOI MOSFETS
CHEN, CED
MATLOUBIAN, M
SUNDARESAN, R
MAO, BY
WEI, CC
POLLACK, GP
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) : 636 - 638
[2] CMOS image sensors: Electronic camera-on-a-chip
Fossum, ER
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (10) : 1689 - 1698
[3] AN INTEGRATED GAAS N-P-N-P THYRISTOR JFET MEMORY CELL EXHIBITING NONDESTRUCTIVE READ
HETHERINGTON, DL
KLEM, JF
WEAVER, HT
[J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (09) : 476 - 481
[4] TURN-ON PHENOMENA IN OPTICALLY AND ELECTRICALLY FIRED THYRISTORS
JAECKLIN, AA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1552 - 1560
[5] X-ray photoelectron spectroscopic evaluation of valence band offsets for strained Si1-xGex, Si1-yCy, and Si1-x-yGexCy on Si(001)
Kim, M
Osten, HJ
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (20) : 2702 - 2704
[6] A capacitor-less 1T-DRAM cell
Okhonin, S
Nagoga, M
Sallese, JM
Fazan, P
[J]. IEEE ELECTRON DEVICE LETTERS, 2002, 23 (02) : 85 - 87
[7] ON BISTABLE BEHAVIOR AND OPEN-BASE BREAKDOWN OF BIPOLAR-TRANSISTORS IN THE AVALANCHE REGIME - MODELING AND APPLICATIONS
REISCH, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) : 1398 - 1409
[8] A NEW STATIC MEMORY CELL BASED ON THE REVERSE BASE CURRENT EFFECT OF BIPOLAR-TRANSISTORS
SAKUI, K
HASEGAWA, T
FUSE, T
WATANABE, S
OHUCHI, K
MASUOKA, F
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (06) : 1215 - 1217
[9] BIPOLAR-TRANSISTOR CARRIER-INJECTED OPTICAL MODULATOR SWITCH - PROPOSAL AND ANALYSIS
TADA, K
OKADA, Y
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 605 - 606

← 1 →