Biristor-Bistable Resistor Based on a Silicon Nanowire

被引：50

作者：

Han, Jin-Woo ^{[1
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 08期

关键词：

Bistable resistor (biristor); n-p-n; p-n-p; silicon nanowire; two terminals; BIPOLAR-TRANSISTORS; CELL;

D O I：

10.1109/LED.2010.2051405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A circuit element, named bistable resistor (or biristor), is proposed. The biristor has two stable resistance states. A high resistance state and low leakage current are maintained until an applied voltage reaches a latch-up voltage to trigger an avalanche effect. A low resistance state and high current are attained at voltage above the latch up. The low resistance state is latched until the applied voltage decreases down to the latch-down voltage. Bistable resistance states are achieved between the latch-down and the latch-up voltage. In addition, an optical stimulus appears to reduce the latch voltages.

引用

页码：797 / 799

页数：3

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