Low-threshold, highly reliable 630 nm-band AlGaIP visible laser diodes with AlInP buried waveguide

被引：14

作者：

Kobayashi, R

Hotta, H

Miyasaka, F

Hara, K

Kobayashi, K

机构：

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 10期

关键词：

visible semiconductor lasers; integrated optics; optical waveguides;

D O I：

10.1049/el:19960605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-threshold, highly reliable 630 nm-band AlGaInP visible laser diodes have bren developed by employing a low-loss optical waveguide buried in the AlInP layer. A low-threshold current oi 19 mA at 25 degrees C is obtained with a cavity length of 310 mu m. This current is the lowest value for 630 nm-band AlGaInP visible laser diodes, to our knowledge. Our AlInP-buried laser diodes with a cavity length of 500 mu m operated over 7000 h without significant degradation at 60 degrees C and 5 mW.

引用

页码：894 / 896

页数：3

共 7 条

[1] TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE [J].