Low-threshold, highly reliable 630 nm-band AlGaIP visible laser diodes with AlInP buried waveguide

被引：14
作者：
Kobayashi, R
Hotta, H
Miyasaka, F
Hara, K
Kobayashi, K
机构：
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 10期
关键词：
visible semiconductor lasers; integrated optics; optical waveguides;
D O I：
10.1049/el:19960605
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-threshold, highly reliable 630 nm-band AlGaInP visible laser diodes have bren developed by employing a low-loss optical waveguide buried in the AlInP layer. A low-threshold current oi 19 mA at 25 degrees C is obtained with a cavity length of 310 mu m. This current is the lowest value for 630 nm-band AlGaInP visible laser diodes, to our knowledge. Our AlInP-buried laser diodes with a cavity length of 500 mu m operated over 7000 h without significant degradation at 60 degrees C and 5 mW.
引用
收藏
页码：894 / 896
页数：3
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