Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO: Ga/glass templates

被引：17

作者：

Lu, Chien-Yuan ^{[1
]}

Chang, Sheng-Po

Chang, Shoou-Jinn

Chiou, Yu-Zung

Kuo, Che-Fu

Chang, Hong-Ming

Hsu, Cheng-Liang

Chen, I-Cherng

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Dept Elect Engn, Tainan 70101, Taiwan

[3] So Taiwan Univ Technol, Dept Elect Engn, Tainan 71005, Taiwan

[4] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

[5] Ind Technol Res Inst S, Micro Syst Technol Ctr, Tainan 709, Taiwan

来源：

IEEE SENSORS JOURNAL | 2007年 / 7卷 / 7-8期

关键词：

detectivity; nanowires; noise equivalent power (NEP); quantum efficiency; vapor-liquid-solid (VLS); ZnO;

D O I：

10.1109/JSEN.2007.896567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only 1.37 x 10(-7) A/cm(2). It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were 5.73 x 10(-11) W and 6.17 x 10(9) cmHz(0.5) W-1, respectively.

引用

页码：1020 / 1024

页数：5

共 30 条

[1] 1/f Noise in nanowires [J].

Bid, A ;

Bora, A ;

Raychaudhuri, AK .

NANOTECHNOLOGY, 2006, 17 (01) :152-156

[2] Confinement-enhanced biexciton binding energy in ZnO/ZnMgO multiple quantum wells [J].

Chia, CH ;

Makino, T ;

Tamura, K ;

Segawa, Y ;

Kawasaki, M ;

Ohtomo, A ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2003, 82 (12) :1848-1850

[3] Polarization-dependent reflectivity from dielectric nanowires [J].

Du, Y ;

Han, S ;

Jin, W ;

Zhou, C ;

Levi, AFJ .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :996-998

[4] LOW-FREQUENCY FLUCTUATIONS IN SOLIDS - 1-F NOISE [J].

DUTTA, P ;

HORN, PM .

REVIEWS OF MODERN PHYSICS, 1981, 53 (03) :497-516

[5] Substrate atomic-termination-induced anisotropic growth of ZnO nanowires/nanorods by the VLS process [J].

Gao, PX ;

Wang, ZL .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (23) :7534-7537

[6] Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction [J].

Han, WQ ;

Fan, SS ;

Li, QQ ;

Hu, YD .

SCIENCE, 1997, 277 (5330) :1287-1289

[7] UV photoresponse of single ZnO nanowires [J].

Heo, YW ;

Kang, BS ;

Tien, LC ;

Norton, DP ;

Ren, F ;

La Roche, JR ;

Pearton, SJ .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (03) :497-499

[8] Site-specific growth of Zno nanorods using catalysis-driven molecular-beam epitaxy [J].

Heo, YW ;

Varadarajan, V ;

Kaufman, M ;

Kim, K ;

Norton, DP ;

Ren, F ;

Fleming, PH .

APPLIED PHYSICS LETTERS, 2002, 81 (16) :3046-3048

[9] Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate [J].

Hsu, CL ;

Chang, SJ ;

Lin, YR ;

Wu, JM ;

Lin, TS ;

Tsai, SY ;

Chen, IC .

NANOTECHNOLOGY, 2006, 17 (02) :516-519

[10] Vertical single-crystal ZnO nanowires grown on ZnO:Ga/glass templates [J].

Hsu, CL ;

Chang, SJ ;

Hung, HC ;

Lin, YR ;

Huang, CJ ;

Tseng, YK ;

Chen, IC .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (06) :649-654

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