Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition

被引：8

作者：

Bundesmann, C. ^{[1
]}

Buiu, O.

Hall, S.

Schubert, M.

机构：

[1] Leibniz Inst Oberflachenmodificierung eV, D-04103 Leipzig, Germany

[2] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

[3] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, Merseyside, England

[4] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2787962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dielectric constants and long-wavelength optical phonon modes of amorphous hafnium aluminate films with a maximum aluminum content of 19 at. % are studied by infrared spectroscopic ellipsometry (IRSE). The hafnium aluminate films were prepared by metal organic chemical vapor deposition on silicon substrates. IRSE revealed one polar lattice mode and one impurity-type mode, which show all a systematic shift in frequency with varying Al content. The static dielectric constant decreases from 10.1 for 4.6 at. % Al to 8.1 for 19 at. % Al. The absolute values were found to be between 50% and 70% smaller than the values obtained from electrical measurements.

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页数：3

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共 17 条

[1] Investigation of optical and electronic properties of hafnium aluminate films deposited by Metal-Organic Chemical Vapour Deposition [J].

Buiu, O. ;

Lu, Y. ;

Hall, S. ;

Mitrovic, I. Z. ;

Potter, R. J. ;

Chalker, P. R. .

THIN SOLID FILMS, 2007, 515 (7-8) :3772-3778

[2] Infrared optical properties of MgxZn1-xO thin films (0 ≤ x ≤ 1):: Long-wavelength optical phonons and dielectric constants [J].

Bundesmann, C. ;

Rahm, A. ;

Lorenz, M. ;

Grundmann, M. ;

Schubert, M. .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)

[3] Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films [J].

Callegari, A ;

Cartier, E ;

Gribelyuk, M ;

Okorn-Schmidt, HF ;

Zabel, T .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6466-6475

[4] RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications [J].

Ding, SJ ;

Hu, H ;

Zhu, CX ;

Kim, SJ ;

Yu, XF ;

Li, MF ;

Cho, BJ ;

Chan, DSH ;

Yu, MB ;

Rustagi, SC ;

Chin, A ;

Kwong, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) :886-894

[5] Hafnium oxide gate dielectrics grown from an alkoxide precursor:: structure and defects [J].

Frank, MA ;

Sayan, S ;

Dörmann, S ;

Emge, TJ ;

Wielunski, LS ;

Garfunkel, E ;

Chabal, YJ .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 109 (1-3) :6-10

[6] Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications [J].

Gusev, EP ;

Cabral, C ;

Copel, M ;

D'Emic, C ;

Gribelyuk, M .

MICROELECTRONIC ENGINEERING, 2003, 69 (2-4) :145-151

[7] INFRARED-REFLECTIVITY STUDY OF ZRO2-HFO2 SOLID-SOLUTIONS [J].

HIRATA, T .

PHYSICAL REVIEW B, 1994, 50 (05) :2874-2879

[8] MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics [J].

Hu, H ;

Zhu, CX ;

Yu, XF ;

Chin, A ;

Li, MF ;

Cho, BJ ;

Kwong, DL ;

Foo, PD ;

Yu, MB ;

Liu, XY ;

Winkler, J .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (02) :60-62

[9] Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry [J].

Kasic, A ;

Schubert, M ;

Einfeldt, S ;

Hommel, D ;

Tiwald, TE .

PHYSICAL REVIEW B, 2000, 62 (11) :7365-7377

[10] Scaling CMOS: Finding the gate stack with the lowest leakage current [J].

Kauerauf, T ;

Govoreanu, B ;

Degraeve, R ;

Groeseneken, G ;

Maes, H .

SOLID-STATE ELECTRONICS, 2005, 49 (05) :695-701