Influence of temperature on methods for determining silicon solar cell series resistance

被引:18
作者
Sabry, M. [1 ]
Ghitas, Ahmed E. [1 ]
机构
[1] Natl Res Inst Astron & Geophys, PV Lab, Solar Res Dept, Cairo 11420, Egypt
来源
JOURNAL OF SOLAR ENERGY ENGINEERING-TRANSACTIONS OF THE ASME | 2007年 / 129卷 / 03期
关键词
silicon solar cell; series resistance; illumination; cell temperature; cell models;
D O I
10.1115/1.2735350
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Series resistance (R,) is considered to be one of the most important parameters affecting solar cell performance, especially those operating under concentrated solar radiation. Many methods have been proposed where the estimated R, values do not coincide or even come close to each other In this paper seven methods for determining R, are reviewed and verified experimentally using a commercial single-crystal silicon solar cell (104 cm 2 of total area). Their differences lie principally in: (1) number of diodes quoted in the solar cell model; (2) other assumptions (constant ideality factor or not, infinite, or finite shunt resistance); and (3) simultaneous determination of other parameters or not. Based on these methods, R, values were derived by extracting the necessary parameters from the measured I-V characteristics of the cell at different illuminations and cell temperatures. According to these methods, the obtained R-s values varied greatly in comparison with each other as well as its trend with temperature variation.
引用
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页码:331 / 335
页数:5
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