A Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch with Temperature-compensated Fast Turn-on Technique for Improving Reliability

被引：25

作者：

Chen, Hsuan-Yu ^{[1
]}

Kao, Yu-Yung ^{[1
]}

Zhang, Zhi-Qiang ^{[1
]}

Liao, Cheng-Hsiang ^{[1
]}

Yang, Hong-Yuan ^{[1
]}

Hsu, Ming-Sheng ^{[1
]}

Chen, Ke-Horng ^{[1
]}

Lin, Ying-Hsi ^{[2
]}

Lin, Shian-Ru ^{[2
]}

Tsai, Tsung-Yen ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Hsinchu, Taiwan

[2] Realtek Semicond, Hsinchu, Taiwan

来源：

2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC) | 2021年 / 64卷

关键词：

D O I：

10.1109/ISSCC42613.2021.9365828

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：460 / +

页数：3

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Zhang, Zhi-Qiang ;

Kao, Yu-Yung ;

Chen, Ke-Horng ;

Lin, Ying-Hsi ;

Lin, Shian-Ru ;

Tsai, Tsung-Yen .

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