Hot-carrier noise under degenerate conditions

被引：0
|
作者：
Tadyszak, P [1 ]
Cappy, A [1 ]
Danneville, F [1 ]
Reggiani, L [1 ]
Varani, L [1 ]
Rota, L [1 ]
机构：
[1] INST ELECT & MICROELECT NORD,CNRS,UMR 9929,DEPT HYPERFREQUENCES & SEMICOND,F-59652 VILLENEUVE DASCQ,FRANCE
来源：
HOT CARRIERS IN SEMICONDUCTORS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：413 / 415
页数：3
相关论文
共 50 条
  • [1] Monte Carlo calculations of hot-carrier noise under degenerate conditions
    Tadyszak, P
    Danneville, F
    Cappy, A
    Reggiani, L
    Varani, L
    Rota, L
    APPLIED PHYSICS LETTERS, 1996, 69 (10) : 1450 - 1452
  • [2] Dynamical formation of hot-carrier intergroup noise under sub-terahertz cyclostationary conditions
    Shiktorov, P
    Starikov, E
    Gruzinskis, V
    Reggiani, L
    Varani, L
    Vaissière, JC
    Pérez, S
    González, T
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S170 - S172
  • [3] CARRIER REPOPULATION FROM INFRARED FARADAY ROTATION UNDER HOT-CARRIER CONDITIONS
    MUKHOPADHYAY, D
    NAG, BR
    PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 360 - +
  • [4] UNIVERSAL FEATURES IN DEGENERATE AND NONDEGENERATE HOT-CARRIER SCREENING
    HU, BYK
    WILKINS, JW
    PHYSICAL REVIEW B, 1990, 41 (15): : 10706 - 10720
  • [5] HOT-CARRIER DISTRIBUTION FUNCTION IN DEGENERATE NONPARABOLIC SEMICONDUCTORS
    SODHA, MS
    PHADKE, UP
    CHAKRAVARTI, AK
    PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08): : 2619 - +
  • [6] Upconversion of intergroup hot-carrier noise in semiconductors operating under periodic large-signal conditions
    Shktorov, P
    Starikov, E
    Grunzoinskis, V
    Perez, S
    Gonzalez, T
    Reggiani, L
    Varani, L
    Vaissiere, JC
    FLUCTUATION AND NOISE LETTERS, 2003, 3 (01): : L51 - L61
  • [7] HOT-CARRIER DISTRIBUTION FUNCTION AND CONDUCTIVITY IN SEMICONDUCTORS WITH DEGENERATE BANDS
    MITIN, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 928 - 930
  • [8] Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions
    Brederlow, R
    Weber, W
    Schmitt-Landsiedel, D
    Thewes, R
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (09) : 1588 - 1596
  • [9] HOT-CARRIER 1-F NOISE IN INSB
    ALEKPEROV, SA
    KADZHAR, CO
    SALAEV, EY
    SHAFIZADE, SR
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (06): : 694 - 695
  • [10] HOT-CARRIER MAGNETORESISTANCE
    NAG, BR
    PARIA, H
    PHYSICAL REVIEW, 1966, 150 (02): : 632 - &
12345