Impedance and dielectric studies of ferroelectric SrBi2Nb2O9 ceramics

被引:24
作者
Venkataraman, BH [1 ]
Varma, KBR [1 ]
机构
[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
关键词
dielectric properties;
D O I
10.1016/S0022-3697(03)00263-4
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This paper reports the dielectric and impedance characteristics of ferroelectric SrBi2Nb2O9 (SBN) ceramics in the 100 Hz-1 MHz frequency range at various temperatures (300- 823 K). A strong low frequency dielectric dispersion (LFDD) associated with an impedance relaxation has been found to exist in these ceramics in the temperature range 573-823 K. The Z" of the AC complex impedance showed two distinct slopes in the frequency range 100 Hz-1 MHz suggesting the existence of two dispersion mechanisms. This non-ideal behavior has been explained on the basis of the expression, Z* = R-0/(1 + (iomega/omega(1))(m) + (iomega/omega(2))(n)) [J. Phys. Chem. Solids 53 (1992) 1] where omega(1) and omega(2) characterize the lattice response and the charge carrier behavior, respectively. The exponents m and n were obtained from the curve fitting. The exponent n was found to exhibit a minimum at the Curie temperature, T-c (723 K) whereas the m was temperature independent. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2105 / 2112
页数:8
相关论文
共 18 条
[1]   CONTRIBUTION OF ELECTRODES AND MICROSTRUCTURES TO THE ELECTRICAL-PROPERTIES OF PB(ZR0.53TI0.47)O-3 THIN-FILM CAPACITORS [J].
ALSHAREEF, HN ;
KINGON, AI ;
CHEN, X ;
BELLUR, KR ;
AUCIELLO, O .
JOURNAL OF MATERIALS RESEARCH, 1994, 9 (11) :2968-2975
[2]  
[Anonymous], J PHYS CHEM SOLIDS
[4]   Impedance spectroscopy of SrBi2Ta2O9 and SrBi2Nb2O9 ceramics correlation with fatigue behavior [J].
Chen, TC ;
Thio, CL ;
Desu, SB .
JOURNAL OF MATERIALS RESEARCH, 1997, 12 (10) :2628-2637
[5]   Structure development studies of SrBi2(Ta1-xNbx)(2)O-9 thin films [J].
Chen, TC ;
Li, TK ;
Zhang, XB ;
Desu, SB .
JOURNAL OF MATERIALS RESEARCH, 1997, 12 (08) :2165-2174
[6]   INTEGRATED SOL-GEL PZT THIN-FILMS ON PT, SI, AND GAAS FOR NONVOLATILE MEMORY APPLICATIONS [J].
DEY, SK ;
ZULEEG, R .
FERROELECTRICS, 1990, 108 :37-46
[7]   FERROELECTRIC THIN-FILMS FOR ELECTRONIC APPLICATIONS [J].
HAERTLING, GH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :414-420
[8]   Structure of ABi(2)Nb(2)O(9) (A=Sr, Ba): Refinement of powder neutron diffraction data [J].
Ismunandar ;
Kennedy, BJ ;
Gunawan ;
Marsongkohadi .
JOURNAL OF SOLID STATE CHEMISTRY, 1996, 126 (01) :135-141
[9]  
Jonscher A. K., 1983, DIELECTRIC RELAXATIO
[10]   UNIVERSAL DIELECTRIC RESPONSE [J].
JONSCHER, AK .
NATURE, 1977, 267 (5613) :673-679