Sol-gel processing of ferroelectric PbTiO3 and Pb(Zr0.5Ti0.5)O3 thin films

被引：10

作者：

Kumar, V ^{[1
]}

Ohya, Y

Takahashi, Y

机构：

[1] Dept Elect, Sci Soc, Ctr Mat Elect Technol, Trissur, Kerala, India

[2] Gifu Univ, Fac Engn, Dept Appl Chem, Gifu 50111, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 08期

关键词：

sol-gel; ferroelectric thin films; lead titanate; PZT; ITO bottom electrode;

D O I：

10.1143/JJAP.37.4477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric thin films of PbTiO3 and Pb(Zr0.5Ti0.5)O-3 were deposited using a sol-gel process from a highly stable precursor solution derived from a unique and simple system consisting of basic lead acetate; titanium and zirconium butoxides. This new system simplifies the chemical processing of precursor solutions of lead titanate-based materials. By adjusting the concentration of the precursor solution and using the dip-coating technique, homogeneous thin films of PbTiO3 and Pb(Zr0.5Ti0.5)O-3 were deposited onto glass, conducting glass and single crystal MgO(100) and SrTiO3(100) substrates. The thin-films were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). P-E hysteresis of these films revealed their ferroelectric nature. The effect of indium-tin-oxide (ITO) bottom electrode on the microstructure of PZT thin films in the PZT/ITO/glass substrate structure is also reported.

引用

页码：4477 / 4481

页数：5

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