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Facile one-pot solvothermal preparation of Modoped Bi2WO6 biscuit-like microstructures for visible-light-driven photocatalytic water oxidation
被引:96
作者:
Etogo, Atangana
[1
]
Liu, Ren
[1
]
Ren, Jiabin
[1
]
Qi, Liwen
[1
]
Zheng, Changcheng
[2
]
Ning, Jiqiang
[3
]
Zhong, Yijun
[1
]
Hu, Yong
[1
,4
]
机构:
[1] Zhejiang Normal Univ, Inst Phys Chem, Jinhua 321004, Peoples R China
[2] Xian Jiaotong Liverpool Univ, Dept Math Sci, Math & Phys Ctr, Suzhou 215123, Peoples R China
[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Vacuum Interconnected Nanotech Workstn, Suzhou 215123, Peoples R China
[4] Zhejiang Univ, Coll Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
关键词:
HETEROSTRUCTURED MICROSPHERES;
DOPED BI2WO6;
SUBSTITUTION;
PERFORMANCE;
HETEROJUNCTION;
NANOCRYSTALS;
PHOSPHATE;
CATALYST;
OXIDE;
SIZE;
D O I:
10.1039/c6ta04923k
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The adsorption behavior and the separation efficiency of photogenerated electron-hole pairs are two important elements in estimating the photocatalytic activity of a photocatalyst. In this work, we have developed a facile one-pot solvothermal method for the preparation of Mo-doped Bi2WO6 with uniform three-dimensional (3D) hierarchical porous biscuit-like microstructures (PBMs). Mo doping is found to have two important roles in the synthesis of Bi2WO6 particles, leading to porous microstructures and adjusting band gaps of the Bi2MoxW1-xO6 particles. The band structure of the as-prepared porous Bi2MoxW1-xO6 products is characterized by UV-vis diffuse reflectance spectroscopy and valence-band X-ray photoelectron spectroscopy. Density functional theory (DFT) calculations give further insights into the band structure of the Bi2MoxW1-xO6 products. In all the samples, Bi2Mo0.21W0.79O6 PBMs exhibit a very efficient catalytic performance in oxidizing water under visible light irradiation (lambda > 420 nm), with an average O-2 evolution rate of up to 147.2 mu mol h(-1) g(-1) and an apparent quantum efficiency (QE) of 3.1% at 420 nm, representing a 2 times more enhancement compared with the non-doped Bi2WO6 sample. This study provides a simple method for designing metal-doped semiconductors with porous structures for different applications.
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页码:13242 / 13250
页数:9
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