Band convergence and nanostructure modulations lead to high thermoelectric performance in SnPb0.04Te-y% AgSbTe2

被引:39
|
作者
Hong, Tao [1 ]
Wang, Dongyang [1 ]
Qin, Bingchao [1 ]
Zhang, Xiao [1 ]
Chen, Yongjin [2 ]
Gao, Xiang [2 ]
Zhao, Li-Dong [1 ]
机构
[1] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
[2] Ctr High Pressure Sci & Technol Adv Res HPSTAR, Beijing 100094, Peoples R China
基金
北京市自然科学基金; 中国国家自然科学基金; 中国博士后科学基金;
关键词
Thermoelectric materials; SnTe; Band convergence; Nanostructures; THERMAL-CONDUCTIVITY; P-TYPE; EFFECTIVE-MASS; SNTE; FIGURE; MERIT; SCATTERING; MG; AGPBMSBTE2+M; MN;
D O I
10.1016/j.mtphys.2021.100505
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
SnTe is a lead-free and promising mid-temperature thermoelectric material while its performance is largely hindered owing to the relatively high hole carrier concentration originating from the existence of extraordinary Sn vacancies in intrinsic SnTe. In this study, we firstly introduced excess Pb into SnTe matrix to compensate the Sn vacancies, leading to the greatly decreased carrier concentration. Then, we found that the ternary compound AgSbTe2 plays synergistic roles in optimizing the thermoelectric transport properties of SnTe. Namely, alloying AgSbTe2 can induce the electronic band convergence and band flattening in SnTe, leading to the significantly enhanced band effective mass (m*) and Seebeck coefficient. Additionally, alloying AgSbTe2 produces plentiful Ag-rich nanoprecipitates, which strengthens the scattering of phonons, leading to the lowest lattice thermal conductivity of similar to 0.47 Wm(-1) K-1. By this stepwise strategy, an outstanding ZT value similar to 1.1 can be attained at 823 K for the SnPb0.04Te-12%AgSbTe2 sample, while an average ZT can be obtained similar to 0.72 from 400 K to 800 K for sample SnPb0.04Te-12%AgSbTe2. Our study further reveals the great potential for SnTe as promising thermoelectrics. (C) 2021 Elsevier Ltd. All rights reserved.
引用
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页数:7
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