AlN/GaN/AlN double heterostructures with thin AlN top barriers

被引：0

作者：

Zervos, Ch. ^{[1
,2
]}

Bairamis, A. ^{[1
,2
]}

Adikimenakis, A. ^{[2
]}

Kostopoulos, A. ^{[2
]}

Kayambaki, M. ^{[2
]}

Tsagaraki, K. ^{[2
]}

Konstantinidis, G. ^{[2
]}

Georgakilas, A. ^{[1
,2
]}

机构：

[1] Univ Crete, Dept Phys, POB 2208, GR-71003 Iraklion, Crete, Greece

[2] FORTH, IESL, Microelect Res Grp, GR-71110 Iraklion, Crete, Greece

来源：

2014 10TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM) | 2014年

关键词：

TRANSISTORS;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

AlN/GaN/AlN double heterostructures grown by PAMBE on sapphire (0001) substrates with different AlN top barrier thicknesses, ranging between 1.5 and 4 nm, were investigated. The two-dimensional electron gas (2DEG) density increased with AlN barrier thickness in agreement with the theoretical values. The highest value of 2.2x10(13) cm(-2) for the HEMT structure with 4.5 nm AlN barrier thickness and the highest mobility of 900 cm(2)/Vs for the structure with 3 nm AlN barrier thickness were obtained. HEMT devices, processed with a gate length of 1 mu m, exhibited a maximum drain current of 1.1 A/mm for 3 and 3.7 nm AlN barrier thickness. The transistor threshold voltage scaled linearly from + 0.2V to -2.7V by varying the AlN barrier thickness from 1.5 nm to 4.5 nm respectively showing a normally- off potential use.

引用

页码：113 / 116

页数：4

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