Creation of High Mobility Two-Dimensional Electron Gases via Strain Induced Polarization at an Otherwise Nonpolar Complex Oxide Interface

被引：98

作者：

Chen, Yunzhong ^{[1
]}

Trier, Felix ^{[1
]}

Kasama, Takeshi ^{[2
]}

Christensen, Dennis V. ^{[1
]}

Bovet, Nicolas ^{[3
]}

Balogh, Zoltan I. ^{[2
]}

Li, Han ^{[1
]}

Thyden, Karl Tor Sune ^{[1
]}

Zhang, Wei ^{[1
]}

Yazdi, Sadegh ^{[2
]}

Norby, Poul ^{[1
]}

Pryds, Nini ^{[1
]}

Linderoth, Soren ^{[1
]}

机构：

[1] Tech Univ Denmark, Dept Energy Convers & Storage, DK-4000 Roskilde, Denmark

[2] Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark

[3] Univ Copenhagen, Dept Chem, Nanosci Ctr, DK-2100 Copenhagen, Denmark

来源：

NANO LETTERS | 2015年 / 15卷 / 03期

关键词：

Complex Oxide interfaces; oxide electronics; two-dimensional electron gases; strain induced polarization; SURFACE; FERROELECTRICITY; CONDUCTIVITY;

D O I：

10.1021/nl504622w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The discovery of two-dimensional eleciton gases (21)EGs) in SrTiO3-based heterostructures proVides new opportunities for nanoeleCtronics. Herein, we creater anew type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CarZrO(3)/SrTiO3. Remarkably, this heterointerface is atomically shall) and exhibitS: a high electron mobility exCeeding 60 000. cm(2) V-1 s(-1) at low temperatures. he 2DEG carrier density:exhibits a critical dependence on thefilua thickness, in good agreement with the polarization induced 2DEG scheme.

引用

页码：1849 / 1854

页数：6

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