Microstructure and electrical properties of ferroelectric Bi3.15Nd0.85Ti3O12/BiFeO3/Bi3.15Nd0.85Ti3O12 trilayered thin films on Pt/Ti/SiO2/Si

被引：3
作者：
Qi, Hongyan [1 ]
Wang, Huaixin [1 ]
Xu, Xiaojun [1 ]
Tang, Yu [1 ]
Xiao, Pengcheng [1 ]
Xiao, Ming [1 ]
机构：
[1] Hubei Univ Educ, Inst Informat Sci & Technol, Dept Mech & Elect Engn, Wuhan 430205, Hubei, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 18期
关键词：
LEAKAGE CURRENT; BIFEO3; DEPOSITION; TITANATE;
D O I：
10.1007/s10854-017-7220-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Dense Bi3.15Nd0.85Ti3O12 (BNdT)/BiFeO3/BNdT trilayered ferroelectric thin films were grown on Pt/Ti/SiO2/Si by the sol-gel method. Cross-sectional transmission electron microscopy investigations revealed that the trilayered thin films exhibited smooth surface morphology and well crystallized microstructure with random orientations. The BNdT layer in the bottom consists of large columnar grains while the top BNdT layer exhibits platelike grains with small size. The remanent polarization and coercive field of the as-prepared films were determined as 34.1 A mu C/cm(2) and 49.6 kV/cm, respectively. The conducting behavior of the trilayered films was dominated by the space-charge-limited current mechanism both in positive bias and negative bias up to 180 kV/cm, while the leakage behavior also followed the Fowler-Nordheim tunneling model in the high electric field region (> 74.2 kV/cm).
引用
收藏
页码：13757 / 13762
页数：6
相关论文
共 32 条
[1]   PREPARATION OF SINGLE-PHASE POLYCRYSTALLINE BIFEO3 [J].
ACHENBACH, GD ;
JAMES, WJ ;
GERSON, R .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1967, 50 (08) :437-+
[2]  
[Anonymous], 2004, DIELECTRIC PHENOMENA
[3]   LEAKAGE CURRENT BEHAVIORS IN RAPID THERMAL ANNEALED BI4TI3O12 THIN-FILMS [J].
CHO, HJ ;
JO, W ;
NOH, TW .
APPLIED PHYSICS LETTERS, 1994, 65 (12) :1525-1527
[4]   Improved electrical properties of PbZrTiO3/BiFeO3 multilayers with ZnO buffer layer [J].
Dutta, Shankar ;
Pandey, Akhilesh ;
Yadav, I. ;
Thakur, O. P. ;
Laishram, R. ;
Pal, Ramjay ;
Chatterjee, Ratnamala .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (08)
[5]   Effect of Nd dopant on magnetic and electric properties of BiFeO3 thin films prepared by metal organic deposition method [J].
Huang, Fengzhen ;
Lu, Xiaomei ;
Lin, Weiwei ;
Wu, Xiumei ;
Kan, Yi ;
Zhu, Jinsong .
APPLIED PHYSICS LETTERS, 2006, 89 (24)
[6]   Multiferroic properties and dielectric relaxation of BiFeO3/Bi3.25La0.75Ti3O12 double-layered thin films [J].
Huang, Fengzhen ;
Lu, Xiaomei ;
Lin, Weiwei ;
Cai, Wei ;
Wu, Xiumei ;
Kan, Yi ;
Sang, Hai ;
Zhu, Jinsong .
APPLIED PHYSICS LETTERS, 2007, 90 (25)
[7]   Multiferroic BiFeO3 thin films processed via chemical solution deposition:: Structural and electrical characterization -: art. no. 094901 [J].
Iakovlev, S ;
Solterbeck, CH ;
Kuhnke, M ;
Es-Souni, M .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)
[8]  
Kao K.C., 1981, ELECT TRANSPORT SOLI
[9]   Enhanced ferroelectric properties of Cr-doped BiFeO3 thin films grown by chemical solution deposition [J].
Kim, JK ;
Kim, SS ;
Kim, WJ ;
Bhalla, AS ;
Guo, R .
APPLIED PHYSICS LETTERS, 2006, 88 (13)
[10]   Microstructure and ferroelectric properties of sol-gel derived Bi3.15Nd0.85Ti3O12 thin films on Pt/Ti/SiO2/Si(100) [J].
Li, JH ;
Qiao, Y ;
Liu, XL ;
Nie, CJ ;
Lu, CJ ;
Xu, ZX ;
Wang, SM ;
Zhang, NX ;
Xie, D ;
Yu, HC ;
Li, JQ .
APPLIED PHYSICS LETTERS, 2004, 85 (15) :3193-3195
1234