Non-linear electrical response of chalcogenide glasses: Memory state phenomena

被引：0
|
作者：
Asokan, S [1 ]
Gopal, ESR [1 ]
机构：
[1] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India
来源：
NON-LINEAR ELECTROMAGNETIC SYSTEMS: ADVANCED TECHNIQUES AND MATHEMATICAL METHODS | 1998年 / 13卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Investigations on the switching behaviour of arsenic-tellurium glasses with Ge or Al additives, yield interesting information about the dependence of switching on network rigidity, co-ordination of the constituents, glass transition & ambient temperature and glass forming ability.
引用
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页码：574 / 577
页数：4
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