Femtosecond photon echo and four-wave mixing studies on GaAs/AlGaAs heterostructure at room temperature

被引：9
作者：
Ivanin, K. V. [1 ]
Leontyev, A. V. [1 ]
Lobkov, V. S. [1 ]
Samartsev, V. V. [1 ]
机构：
[1] Russian Acad Sci, Kazan Phys Tech Inst, Kazan 420029, Russia
来源：
LASER PHYSICS LETTERS | 2010年 / 7卷 / 08期
基金：
俄罗斯基础研究基金会;
关键词：
photon echo; femtosecond spectroscopy; dephasing time; four-wave mixing; GaAs/AlGaAs heterostructure; SEMICONDUCTOR-LASERS; YTTERBIUM VAPOR; SPECTROSCOPY; GAAS; RELAXATION; SCATTERING;
D O I：
10.1002/lapl.201010035
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report femtosecond photon echo and four-wave mixing measurements performed on GaAs/AlGaAs heterostructure at room temperature. In femtosecond photon echo experiment the dephasing time was obtained, found to vary between 40 and 55 fs depending on carrier density. The dependence showed a power-law behavior T-2 alpha N-0.22, which indicates that major phase coherence loss is due to screened Coulomb electron-electron interaction. Transient grating experiments yielded the electron diffusion coefficient value of 200 cm(2)/s and electron relaxation time equal to 3 ns.
引用
收藏
页码：583 / 586
页数：4
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