Lead Acetate Assisted Interface Engineering for Highly Efficient and Stable Perovskite Solar Cells

被引:18
|
作者
Zhang, Yuanyuan [1 ,2 ]
Ma, Yongchao [1 ,2 ]
Shin, Insoo [1 ,2 ]
Jung, Yun Kyung [3 ]
Lee, Bo Ram [2 ]
Wu, Sangwook [1 ,2 ]
Jeong, Jung Hyun [2 ]
Lee, Byoung Hoon [4 ]
Kim, Joo Hyun [5 ]
Kim, Kwang Ho [1 ]
Park, Sung Heum [1 ,2 ]
机构
[1] Pusan Natl Univ, Hybrid Interface Mat Global Frontier Res Grp, Busan 608737, South Korea
[2] Pukyong Natl Univ, Dept Phys, Busan 48513, South Korea
[3] Inje Univ, Dept Biomed Engn, Gimhae 50834, South Korea
[4] Ewha Womans Univ, Div Chem Engn & Mat Sci, Seoul 03760, South Korea
[5] Pukyong Natl Univ, Dept Polymer Engn, Busan 608739, South Korea
基金
新加坡国家研究基金会;
关键词
Pb(OAc)(2); top and bottom ways; high efficiency; long-term stability; perovskite solar cells; PERFORMANCE; PEDOTPSS; STABILITY; LAYER; FILMS;
D O I
10.1021/acsami.9b19691
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
High power conversion efficiency (PCE) and long-term stability are inevitable issues faced in practical device applications of perovskite solar cells. In this paper, significant enhancements in the device efficiency and stability are achieved by using a surface-active lead acetate (Pb(OAc)(2)) at the top or bottom of CH3NH3PbI3 (MAPbI(3))-based perovskite. When a saturated Pb(OAc)(2) solution is introduced on the top of the MAPbI(3) perovskite precursor, the OAc- in Pb(OAc)(2) participates in lattice restructuring of MAPbI(3) to form MAPbI(3-x)(OAc)(x), thereby producing a high-quality perovskite film with high crystallinity, large grain sizes, and uniform and pinhole-free morphology. Moreover, when Pb(OAc)(2) solution is mixed in the poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) solution in the bottom way, the OAC(-) in Pb(OAc)(2) improves the water resistance of PEDOT-PSS. As the OAc- easily bonds with the Pb2+, the deposition of MAPbI(3) precursor onto the Pb(OAc)(2) mixed with PEDOT-PSS results in a reduction of the uncoordinated Pb, leading to strong stabilization of the perovskite layer. Both the top- and bottom-treated devices exhibit enhanced PCE values of 18.93% and 18.28%, respectively, compared to the conventional device with a PCE of 16.47%, which originates from decreased trap sites and reduced energy barriers. In particular, the bottom-treated device exhibits long-term stability, with more than 84% of its initial PCE over 800 h in an ambient environment.
引用
收藏
页码:7186 / 7197
页数:12
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