Indentation-induced phase transformations in silicon: influences of load, rate and indenter angle on the transformation behavior

被引：288
|
作者：
Jang, JI
Lance, MJ
Wen, SQ
Tsui, TY
Pharr, GM
机构：
[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA
[3] Texas Instruments Inc, Dallas, TX 75243 USA
来源：
ACTA MATERIALIA | 2005年 / 53卷 / 06期
基金：
美国国家科学基金会;
关键词：
nanoindentation; phase transformations; silicon; Raman spectroscopy;
D O I：
10.1016/j.actamat.2004.12.025
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (10 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3 degrees to 85.0 degrees. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load-displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：1759 / 1770
页数：12
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