Indentation-induced phase transformations in silicon: influences of load, rate and indenter angle on the transformation behavior

被引:288
作者
Jang, JI
Lance, MJ
Wen, SQ
Tsui, TY
Pharr, GM
机构
[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA
[3] Texas Instruments Inc, Dallas, TX 75243 USA
基金
美国国家科学基金会;
关键词
nanoindentation; phase transformations; silicon; Raman spectroscopy;
D O I
10.1016/j.actamat.2004.12.025
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (10 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3 degrees to 85.0 degrees. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load-displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:1759 / 1770
页数:12
相关论文
共 53 条
[1]   Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon [J].
Bradby, JE ;
Williams, JS ;
Wong-Leung, J ;
Swain, MV ;
Munroe, P .
APPLIED PHYSICS LETTERS, 2000, 77 (23) :3749-3751
[2]   In situ electrical characterization of phase transformations in Si during indentation -: art. no. 085205 [J].
Bradby, JE ;
Williams, JS ;
Swain, MV .
PHYSICAL REVIEW B, 2003, 67 (08)
[3]   Mechanical deformation in silicon by micro-indentation [J].
Bradby, JE ;
Williams, JS ;
Wong-Leung, J ;
Swain, MV ;
Munroe, P .
JOURNAL OF MATERIALS RESEARCH, 2001, 16 (05) :1500-1507
[4]   THE EXTENT OF PHASE-TRANSFORMATION IN SILICON HARDNESS INDENTATIONS [J].
CALLAHAN, DL ;
MORRIS, JC .
JOURNAL OF MATERIALS RESEARCH, 1992, 7 (07) :1614-1617
[5]   SOLID-SOLID PHASE-TRANSITIONS AND SOFT PHONON MODES IN HIGHLY CONDENSED SI [J].
CHANG, KJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1985, 31 (12) :7819-7826
[6]   AMORPHIZATION AND CONDUCTIVITY OF SILICON AND GERMANIUM INDUCED BY INDENTATION [J].
CLARKE, DR ;
KROLL, MC ;
KIRCHNER, PD ;
COOK, RF ;
HOCKEY, BJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2156-2159
[7]   REVERSIBLE PRESSURE-INDUCED STRUCTURAL TRANSITIONS BETWEEN METASTABLE PHASES OF SILICON [J].
CRAIN, J ;
ACKLAND, GJ ;
MACLEAN, JR ;
PILTZ, RO ;
HATTON, PD ;
PAWLEY, GS .
PHYSICAL REVIEW B, 1994, 50 (17) :13043-13046
[8]  
Domnich V., 2002, Reviews on Advanced Materials Science, V3, P1
[9]   Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon [J].
Domnich, V ;
Gogotsi, Y ;
Dub, S .
APPLIED PHYSICS LETTERS, 2000, 76 (16) :2214-2216
[10]  
Domnich V, 2001, HDB SURFACES INTERFA, V2, P195