Indentation-induced phase transformations in silicon: influences of load, rate and indenter angle on the transformation behavior

被引：288
作者：
Jang, JI
Lance, MJ
Wen, SQ
Tsui, TY
Pharr, GM
机构：
[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA
[3] Texas Instruments Inc, Dallas, TX 75243 USA
来源：
ACTA MATERIALIA | 2005年 / 53卷 / 06期
基金：
美国国家科学基金会;
关键词：
nanoindentation; phase transformations; silicon; Raman spectroscopy;
D O I：
10.1016/j.actamat.2004.12.025
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (10 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3 degrees to 85.0 degrees. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load-displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：1759 / 1770
页数：12
相关论文
共 53 条
  • [1] Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon
    Bradby, JE
    Williams, JS
    Wong-Leung, J
    Swain, MV
    Munroe, P
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (23) : 3749 - 3751
  • [2] In situ electrical characterization of phase transformations in Si during indentation -: art. no. 085205
    Bradby, JE
    Williams, JS
    Swain, MV
    [J]. PHYSICAL REVIEW B, 2003, 67 (08):
  • [3] Mechanical deformation in silicon by micro-indentation
    Bradby, JE
    Williams, JS
    Wong-Leung, J
    Swain, MV
    Munroe, P
    [J]. JOURNAL OF MATERIALS RESEARCH, 2001, 16 (05) : 1500 - 1507
  • [4] THE EXTENT OF PHASE-TRANSFORMATION IN SILICON HARDNESS INDENTATIONS
    CALLAHAN, DL
    MORRIS, JC
    [J]. JOURNAL OF MATERIALS RESEARCH, 1992, 7 (07) : 1614 - 1617
  • [5] SOLID-SOLID PHASE-TRANSITIONS AND SOFT PHONON MODES IN HIGHLY CONDENSED SI
    CHANG, KJ
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1985, 31 (12): : 7819 - 7826
  • [6] AMORPHIZATION AND CONDUCTIVITY OF SILICON AND GERMANIUM INDUCED BY INDENTATION
    CLARKE, DR
    KROLL, MC
    KIRCHNER, PD
    COOK, RF
    HOCKEY, BJ
    [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2156 - 2159
  • [7] REVERSIBLE PRESSURE-INDUCED STRUCTURAL TRANSITIONS BETWEEN METASTABLE PHASES OF SILICON
    CRAIN, J
    ACKLAND, GJ
    MACLEAN, JR
    PILTZ, RO
    HATTON, PD
    PAWLEY, GS
    [J]. PHYSICAL REVIEW B, 1994, 50 (17): : 13043 - 13046
  • [8] Domnich V., 2002, Reviews on Advanced Materials Science, V3, P1
  • [9] Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon
    Domnich, V
    Gogotsi, Y
    Dub, S
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (16) : 2214 - 2216
  • [10] Domnich V, 2001, HDB SURFACES INTERFA, V2, P195
123456