High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi2Se3/Silicon Heterostructure Broadband Photodetectors

被引:343
|
作者
Zhang, Hongbin [1 ]
Zhang, Xiujuan [1 ]
Liu, Chang [1 ]
Lee, Shuit-Tong [1 ]
Jie, Jiansheng [1 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Collaborat Innovat Ctr Suzhou Nano Sci Technol, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
topological insulator; silicon; heterostructure photodetector; high responsivity; fast photoresponse; SURFACE-STATES; GRAPHENE; BI2SE3; HETEROJUNCTION; NANOSTRUCTURES; PHOTOCURRENTS; TEMPERATURE; BI2TE3; SB2TE3; FILM;
D O I
10.1021/acsnano.6b00272
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
As an exotic state of quantum matter, topological insulators have promising applications in new generation electronic and optoelectronic devices. The realization of these applications relies critically on the preparation and properties understanding of high-quality topological insulators, which however are mainly fabricated by high-cost methods like molecular beam epitaxy. We here report the successful preparation of high-quality topological insulator Bi2Se3/Si heterostructure having an atomically abrupt interface by van der Waals epitaxy growth of Bi2Se3 films on Si wafer. A simple, low-cost physical vapor deposition (PVD) method was employed to achieve the growth of the Bi2Se3 films. The Bi2Se3/Si heterostructure exhibited excellent diode characteristics with a pronounced photoresponse under light illumination. The built-in potential at the Bi2Se3/Si interface greatly facilitated the separation and transport of photogenerated carriers, enabling the photodetector to have a high light responsivity of 24.28 A W-1, a high detectivity of 4.39 X 10(12) Jones (Jones = cm Hz(1/2) W-1), and a fast response speed of aproximately microseconds. These device parameters represent the highest values for topological insulator-based photodetectors. Additionally, the photodetector possessed broadband detection ranging from ultraviolet to optical telecommunication wavelengths. Given the simple device architecture and compatibility with silicon technology, the topological insulator Bi2Se3/Si heterostructure holds great promise for high-performance electronic and optoelectronic applications.
引用
收藏
页码:5113 / 5122
页数:10
相关论文
共 50 条
  • [41] A computational investigation of topological insulator Bi2Se3 film
    Hu, Yi-Bin
    Zhao, Yong-Hong
    Wang, Xue-Feng
    FRONTIERS OF PHYSICS, 2014, 9 (06) : 760 - 767
  • [42] Quantum frequency doubling in the topological insulator Bi2Se3
    He, Pan
    Isobe, Hiroki
    Zhu, Dapeng
    Hsu, Chuang-Han
    Fu, Liang
    Yang, Hyunsoo
    NATURE COMMUNICATIONS, 2021, 12 (01)
  • [43] Stability of the (0001) surface of the Bi2Se3 topological insulator
    Tereshchenko, O. E.
    Kokh, K. A.
    Atuchin, V. V.
    Romanyuk, K. N.
    Makarenko, S. V.
    Golyashov, V. A.
    Kozhukhov, A. S.
    Prosvirin, I. P.
    Shklyaev, A. A.
    JETP LETTERS, 2011, 94 (06) : 465 - 468
  • [44] Toward the Intrinsic Limit of the Topological Insulator Bi2Se3
    Dai, Jixia
    West, Damien
    Wang, Xueyun
    Wang, Yazhong
    Kwok, Daniel
    Cheong, S. -W.
    Zhang, S. B.
    Wu, Weida
    PHYSICAL REVIEW LETTERS, 2016, 117 (10)
  • [45] Photoinduced terahertz dynamics in Bi2Se3 topological insulator
    Giorgianni, F.
    Shalaby, M.
    Vicario, C.
    Hauri, C. P.
    Lupi, S.
    2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2017,
  • [46] Terahertz plasmonic excitations in Bi2Se3 topological insulator
    Autore, M.
    Di Pietro, P.
    Di Gaspare, A.
    D'Apuzzo, F.
    Giorgianni, F.
    Brahlek, Matthew
    Koirala, Nikesh
    Oh, Seangshik
    Lupi, S.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 29 (18)
  • [47] Reactive Chemical Doping of the Bi2Se3 Topological Insulator
    Benia, Hadj M.
    Lin, Chengtian
    Kern, Klaus
    Ast, Christian R.
    PHYSICAL REVIEW LETTERS, 2011, 107 (17)
  • [48] Thickness dependence of conductivity in Bi2Se3 topological insulator
    Chistyakov, V. V.
    Domozhirova, A. N.
    Huang, J. C. A.
    Marchenkov, V. V.
    VII EURO-ASIAN SYMPOSIUM TRENDS IN MAGNETISM, 2019, 1389
  • [49] Gas Doping on the Topological Insulator Bi2Se3 Surface
    Koleini, Mohammad
    Frauenheim, Thomas
    Yan, Binghai
    PHYSICAL REVIEW LETTERS, 2013, 110 (01)
  • [50] Carrier transport in Bi2Se3 topological insulator slab
    Gupta, Gaurav
    Lin, Hsin
    Bansil, Arun
    Jalil, Mansoor Bin Abdul
    Liang, Gengchiau
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2015, 74 : 10 - 19