Energy loss of channeled 290 MeV/u C6+ ions in a Si crystal

被引：6

作者：

Ito, T

Azuma, T

Komaki, K

Yamazaki, Y

Sano, M

Torikoshi, M

Kitagawa, A

Takada, E

Murakami, T

机构：

[1] Univ Tokyo, Coll Arts & Sci, Inst Phys, Meguro Ku, Tokyo 153, Japan

[2] Natl Inst Radiol Sci, Inage Ku, Chiba 263, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 135卷 / 1-4期

关键词：

D O I：

10.1016/S0168-583X(97)00587-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have succeeded in observing the channeling of 290 MeV/u C6+ ions in a Si crystal, Under (1 1 0) axial, and (0 0 4), (2 (2) over bar 0) and (1 (1) over bar 1) planar channeling conditions, energy loss of the channeled ion in the Si crystal was observed. We also calculated the trajectory dependent stopping power for planar channeling ions, which employs mean and local electron densities evaluated adopting the Moliere potential. Calculated energy loss spectra were Found to reproduce the experimental results quite well. (C) 1998 Elsevier Science B.V.

引用

页码：132 / 137

页数：6

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